CHANGXIN MEMORY TCHNOLOGIES, INC.

City:

Hefei

Country:

China

Published Applications:

Last publication date:

2021-12-02

Patent Grants:

Last grant date:

2024-01-02

Top Inventors for applications by CHANGXIN MEMORY TCHNOLOGIES, INC.

These are the the leading inventors for applications assigned to CHANGXIN MEMORY TCHNOLOGIES, INC.:

ChihCheng LIU 1 Hefei, China

Recent patent applications by CHANGXIN MEMORY TCHNOLOGIES, INC.

CHANGXIN MEMORY TCHNOLOGIES, INC. based in Hefei, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2021-12-02 ✅ Patent 11,862,281 granted on 2024-01-02

US20210375329A1

Physics

Word line lead-out structure and method for preparing same

AssigneeID:

349417 ⎘