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Assignee profile:

VISUAL PHOTONICS EPITAXY CO., LTD.

City:

Taoyuan

Country:

Taiwan

Published Applications:

22

Last publication date:

2024-07-04

Patent Grants:

22

Last grant date:

2025-05-06

Top Inventors for applications by VISUAL PHOTONICS EPITAXY CO., LTD.

These are the the leading inventors for applications assigned to VISUAL PHOTONICS EPITAXY CO., LTD.:

Recent patent applications by VISUAL PHOTONICS EPITAXY CO., LTD.

VISUAL PHOTONICS EPITAXY CO., LTD. based in Taoyuan, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2024-07-04 ✅ Patent 12,295,152 granted on 2025-05-06
US20240222477A1
Electricity

High ruggedness heterojunction bipolar transistor (HBT)

 #2 | 2024-03-07 ✅ Patent 12,532,567 granted on 2026-01-20
US20240079510A1
Electricity

SEMICONDUCTOR COMPONENT HAVING DEFECT BARRIER REGION

 #3 | 2023-03-30 ✅ Patent 12,424,822 granted on 2025-09-23
US20230102405A1
Electricity

SEMICONDUCTOR LASER DIODE INCLUDING MULTIPLE ACTIVE LAYERS AND A GRATING LAYER

 #4 | 2022-10-13 ✅ Patent 11,799,011 granted on 2023-10-24
US20220328645A1
Electricity

Semiconductor epitaxial wafer

 #5 | 2021-07-15 ✅ Patent 11,929,427 granted on 2024-03-12
US20210217881A1
Electricity

High ruggedness heterojunction bipolar transistor (HBT)

 #6 | 2021-04-08 ✅ Patent 12,316,076 granted on 2025-05-27
US20210104872A1
Electricity

Vertical cavity surface emitting laser diode (VCSEL) with tunnel junction

 #7 | 2021-03-11 ✅ Patent 11,482,830 granted on 2022-10-25
US20210075185A1
Electricity

Measurement method of reflection spectrum of vertical cavity surface emitting laser diode (VCSEL) and epitaxial wafer test fixture

 #8 | 2021-01-21 ✅ Patent 11,721,954 granted on 2023-08-08
US20210021104A1
Electricity

Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain

 #9 | 2020-12-17 ✅ Patent 11,862,938 granted on 2024-01-02
US20200395737A1
Electricity

Semiconductor laser diode

 #10 | 2020-06-25 ✅ Patent 11,133,405 granted on 2021-09-28
US20200203510A1
Electricity

High ruggedness heterojunction bipolar transistor

 #11 | 2020-06-18 ✅ Patent 10,818,781 granted on 2020-10-27
US20200194573A1
Electricity

Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer

 #12 | 2020-05-21 ✅ Patent 11,049,936 granted on 2021-06-29
US20200161421A1
Electricity

High ruggedness heterojunction bipolar transistor structure

 #13 | 2019-12-05 ✅ Patent 11,158,995 granted on 2021-10-26
US20190372310A1
Electricity

Laser diode with defect blocking layer

 #14 | 2019-04-18 ✅ Patent 10,651,298 granted on 2020-05-12
US20190115458A1
Electricity

Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer

 #15 | 2015-09-10 ✅ Patent 9,853,136 granted on 2017-12-26
US20150255585A1
Electricity

Directed epitaxial heterojunction bipolar transistor

 #16 | 2014-12-11 ✅ Patent 9,130,027 granted on 2015-09-08
US20140361344A1
Electricity

High electron mobility bipolar transistor

 #17 | 2014-02-27 ✅ Patent 8,994,069 granted on 2015-03-31
US20140054647A1
Electricity

BiHEMT device having a stacked separating layer

 #18 | 2009-08-11 ✅ Patent 7,573,080 granted on 2009-08-11
US12143738
-

Transient suppression semiconductor device

 #19 | 2007-04-26 ✅ Patent 7,385,236 granted on 2008-06-10
US20070090399A1
Electricity

BiFET semiconductor device having vertically integrated FET and HBT

 #20 | 2007-01-25 ✅ Patent 7,384,808 granted on 2008-06-10
US20070020788A1
Electricity

Fabrication method of high-brightness light emitting diode having reflective layer

 #21 | 2007-01-18 ✅ Patent 7,335,924 granted on 2008-02-26
US20070012937A1
Electricity

High-brightness light emitting diode having reflective layer

 #22 | 2005-03-10 ✅ Patent 7,224,005 granted on 2007-05-29
US20050051799A1
Electricity

Heterojunction bipolar transistor structure

Also check out VISUAL PHOTONICS EPITAXY CO., LTD.'s (Taoyuan, Taiwan) applicant profile with 18 patent applications submitted.

AssigneeID:

349479 ⎘