FAST SIC SEMICONDUCTOR INCORPORATED

City:

Hsinchu

Country:

Taiwan

Published Applications:

Last publication date:

2024-12-26

Patent Grants:

Last grant date:

2025-03-25

Top Inventors for applications by FAST SIC SEMICONDUCTOR INCORPORATED

These are the the leading inventors for applications assigned to FAST SIC SEMICONDUCTOR INCORPORATED:

Cheng-Tyng Yen 8 Hsinchu, Taiwan
Hsiang-Ting Hung 5 Hsinchu, Taiwan
Fu-Jen Hsu 5 Hsinchu, Taiwan
Cheng-Tyng Yen 4 Hsinchu City, Taiwan

Fu-Jen HSU 2 HSINCHU CITY, Taiwan
Hsiang-Ting HUNG 2 Hsinchu City, Taiwan

Recent patent applications by FAST SIC SEMICONDUCTOR INCORPORATED

FAST SIC SEMICONDUCTOR INCORPORATED based in Hsinchu, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2024-12-26 ✅ Patent 12,261,594 granted on 2025-03-25

US20240429912A1

Electricity

Cascode diode circuit

#2 | 2023-11-30 ✅ Patent 12,419,089 granted on 2025-09-16

US20230387215A1

Electricity

SILICON CARBIDE SEMICONDUCTOR DEVICE

#3 | 2023-11-09 ✅ Patent 12,495,576 granted on 2025-12-09

US20230361209A1

Electricity

SILICON CARBIDE SEMICONDUCTOR DEVICE

#4 | 2023-03-09 ✅ Patent 11,888,056 granted on 2024-01-30

US20230071655A1

Electricity

Silicon carbide MOS-gated semiconductor device

#5 | 2021-11-25 ✅ Patent 11,489,521 granted on 2022-11-01

US20210367593A1

Electricity

Power transistor module and controlling method thereof

#6 | 2021-08-05 ✅ Patent 11,190,181 granted on 2021-11-30

US20210242868A1

Electricity

Power transistor module and controlling method thereof

#7 | 2021-02-11 ✅ Patent 11,018,228 granted on 2021-05-25

US20210043736A1

Electricity

Silicon carbide semiconductor device

#8 | 2021-01-14 ✅ Patent 11,195,922 granted on 2021-12-07

US20210013309A1

Electricity

Silicon carbide semiconductor device

Also check out Fast SiC Semiconductor Incorporated's (Hsinchu, Taiwan) applicant profile with 9 patent applications submitted.

AssigneeID:

352443 ⎘