Assignee profile:

JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD.

City:

Jiangsu

Country:

China

Published Applications:

24

Last publication date:

2022-09-22

Patent Grants:

24

Last grant date:

2022-09-13

Top Inventors for applications by JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD.

These are the the leading inventors for applications assigned to JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD.:

Recent patent applications by JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD.

JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD. based in Jiangsu, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2022-09-22 ✅ Patent 11,443,789 granted on 2022-09-13
US20220301611A1
Physics

Memory device

#2 | 2022-09-22 ✅ Patent 11,829,605 granted on 2023-11-28
US20220300167A1
Physics

Memory device with redundant memory circuit and repair method thereof

#3 | 2022-09-15 ✅ Patent 11,621,024 granted on 2023-04-04
US20220293142A1
Physics

Calibration device

#4 | 2022-09-01 ✅ Patent 11,996,464 granted on 2024-05-28
US20220278219A1
Electricity

Method of fabricating diode structure

#5 | 2022-03-31 ✅ Patent 11,468,307 granted on 2022-10-11
US20220101107A1
Physics

Artificial neuromorphic circuit and operation method

#6 | 2021-12-30 ✅ Patent 11,443,177 granted on 2022-09-13
US20210406658A1
Physics

Artificial neuromorphic circuit and operation method

#7 | 2021-12-30 ✅ Patent 11,551,070 granted on 2023-01-10
US20210406651A1
Physics

Artificial neuromorphic circuit and operation method

#8 | 2021-12-30 ✅ Patent 11,580,370 granted on 2023-02-14
US20210406650A1
Physics

Artificial neuromorphic circuit and operation method

#9 | 2021-12-02 ✅ Patent 11,258,013 granted on 2022-02-22
US20210376238A1
Electricity

Method of manufacturing phase change memory

#10 | 2021-12-02 ✅ Patent 11,302,866 granted on 2022-04-12
US20210376237A1
Electricity

Method of manufacturing phase change memory and phase change memory

#11 | 2021-12-02 ✅ Patent 11,362,192 granted on 2022-06-14
US20210376110A1
Electricity

Method of fabricating diode structure

#12 | 2021-11-18 ✅ Patent 11,436,137 granted on 2022-09-06
US20210357317A1
Physics

Memory device and operation method for performing wear leveling on a memory device

#13 | 2021-10-07 ✅ Patent 11,257,542 granted on 2022-02-22
US20210312980A1
Physics

Memory driving device

#14 | 2021-09-02 ✅ Patent 11,315,632 granted on 2022-04-26
US20210272628A1
Physics

Memory drive device

#15 | 2020-11-26 ✅ Patent 11,476,417 granted on 2022-10-18
US20200373483A1
Electricity

Phase change memory and method of fabricating the same

#16 | 2020-10-01 ✅ Patent 10,984,885 granted on 2021-04-20
US20200312421A1
Physics

Memory test array and test method thereof

#17 | 2020-09-24 ✅ Patent 10,811,607 granted on 2020-10-20
US20200303638A1
Electricity

Phase change memory and method of fabricating the same

#18 | 2020-08-27 ✅ Patent 10,770,121 granted on 2020-09-08
US20200273505A1
Physics

Memory device and memory writing method

#19 | 2020-07-09 ✅ Patent 10,964,383 granted on 2021-03-30
US20200219563A1
Physics

Memory driving device

#20 | 2020-06-25 ✅ Patent 10,692,571 granted on 2020-06-23
US20200202929A1
Physics

Memory device

#21 | 2020-06-25 ✅ Patent 10,679,681 granted on 2020-06-09
US20200202904A1
Physics

Sensing-amplifying device

#22 | 2020-05-26 ✅ Patent 10,665,296 granted on 2020-05-26
US16364166
Physics

Memory driving device

#23 | 2020-04-28 ✅ Patent 10,636,464 granted on 2020-04-28
US16365655
Physics

Memory device

#24 | 2017-03-16 ✅ Patent 9,865,347 granted on 2018-01-09
US20170076796A1
Physics

Memory driving circuit

Also check out Jiangsu Advanced Memory Technology Co., Ltd.'s (Jiangsu, China) applicant profile with 24 patent applications submitted.

AssigneeID:

355099 ⎘