BANCIAO CITY
Taiwan
22
2013-08-22
14
2014-05-13
These are the the leading inventors for applications assigned to FORCE MOS TECHNOLOGY CO., LTD.:
FORCE MOS TECHNOLOGY CO., LTD. based in BANCIAO CITY, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Integrated trench MOSFET with trench Schottky rectifier
#2 | 2012-12-13 ✅ Patent 8,598,624 granted on 2013-12-03Fast switching hybrid IGBT device with trenched contacts
#3 | 2012-12-06 ✅ Patent 8,563,381 granted on 2013-10-22Method for manufacturing a power semiconductor device
#4 | 2012-12-06 ✅ Patent 8,384,194 granted on 2013-02-26Power semiconductor device comprising a plurality of trench IGBTs
#5 | 2012-08-30IGBT WITH INTEGRATED MOSFET AND FAST SWITCHING DIODE
#6 | 2012-08-02 ✅ Patent 8,652,900 granted on 2014-02-18Trench MOSFET with ultra high cell density and manufacture thereof
#7 | 2012-07-12TRENCH MOS RECTIFIER
#8 | 2012-07-12TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS AND SELF-ALIGNED TRENCHED CONTACT
#9 | 2012-06-28 ✅ Patent 8,253,164 granted on 2012-08-28Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts
#10 | 2012-04-05TRENCH MOSFET WITH SUPER PINCH-OFF REGIONS
#11 | 2012-02-16Trench mosfet with integrated schottky rectifier in same cell
#12 | 2011-10-13 ✅ Patent 8,378,392 granted on 2013-02-19Trench MOSFET with body region having concave-arc shape
#13 | 2011-09-29 ✅ Patent 8,264,035 granted on 2012-09-11Avalanche capability improvement in power semiconductor devices
#14 | 2011-09-29Semiconductor power device layout for stress reduction
#15 | 2011-07-14 ✅ Patent 8,178,922 granted on 2012-05-15Trench MOSFET with ultra high cell density and manufacture thereof
#16 | 2011-06-30 ✅ Patent 8,067,800 granted on 2011-11-29Super-junction trench MOSFET with resurf step oxide and the method to make the same
#17 | 2011-05-26 ✅ Patent 7,989,887 granted on 2011-08-02Trench MOSFET with trenched floating gates as termination
#18 | 2011-04-07Trench mosfet with high cell density
#19 | 2011-03-24 ✅ Patent 8,105,903 granted on 2012-01-31Method for making a trench MOSFET with shallow trench structures
#20 | 2011-03-24Trench MOSFET with high cell density
#21 | 2011-01-13 ✅ Patent 8,058,685 granted on 2011-11-15Trench MOSFET structures using three masks process
#22 | 2010-07-15 ✅ Patent 8,426,913 granted on 2013-04-23Integrated trench MOSFET with trench Schottky rectifier
35600 ⎘