GHANGXIN MEMORY TECHNOLOGIES, INC.

City:

Hefei

Country:

China

Published Applications:

Last publication date:

2023-03-02

Patent Grants:

Last grant date:

2023-02-14

Top Inventors for applications by GHANGXIN MEMORY TECHNOLOGIES, INC.

These are the the leading inventors for applications assigned to GHANGXIN MEMORY TECHNOLOGIES, INC.:

SUNGSOO CHI 2 Hefei, China
SUNGSOO CHI 1 Hefei City, China
Ling-Yi CHUANG 1 Hefei, China
Feng Wu 1 Hefei, China

Sang Yeol Park 1 Hefei, China
Feng WU 1 Hefei City, Anhui, China
Liyuan HU 1 Hefei City, Anhui, China
Liyuan Hu 1 Hefei, China

Sang Yeol PARK 1 Hefei City, Anhui, China

Recent patent applications by GHANGXIN MEMORY TECHNOLOGIES, INC.

GHANGXIN MEMORY TECHNOLOGIES, INC. based in Hefei, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-03-02 ✅ Patent 11,581,034 granted on 2023-02-14

US20230066578A1

Physics

Sense amplification circuit and method of reading out data

#2 | 2023-02-28 ✅ Patent 11,594,264 granted on 2023-02-28

US17813998

Physics

Readout circuit layout structure and method of reading data

#3 | 2022-11-01 ✅ Patent 11,488,917 granted on 2022-11-01

US17648313

Electricity

Semiconductor structure and manufacturing method thereof

#4 | 2022-09-15 ✅ Patent 11,586,118 granted on 2023-02-21

US20220291599A1

Physics

Alignment mark evaluation method and alignment mark evaluation system

#5 | 2022-08-25 ✅ Patent 11,622,488 granted on 2023-04-04

US20220271038A1

Electricity

Semiconductor structure and manufacturing method thereof

AssigneeID:

357840 ⎘