Melville, New York
United States
25
2008-01-24
25
2009-04-28
These are the the leading inventors for applications assigned to General Semiconductor, Inc.:
General Semiconductor, Inc. based in Melville, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Surface mount multichip devices
#2 | 2006-11-30 ✅ Patent 7,586,148 granted on 2009-09-08Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenches
#3 | 2006-11-09 ✅ Patent 7,745,885 granted on 2010-06-29High voltage power MOSFET having low on-resistance
#4 | 2006-08-22 ✅ Patent 7,094,640 granted on 2006-08-22Method of making a trench MOSFET device with improved on-resistance
#5 | 2006-08-15 ✅ Patent 7,091,552 granted on 2006-08-15High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation
#6 | 2006-08-01 ✅ Patent 7,084,455 granted on 2006-08-01Power semiconductor device having a voltage sustaining region that includes terraced trench with continuous doped columns formed in an epitaxial layer
#7 | 2006-06-27 ✅ Patent 7,067,376 granted on 2006-06-27High voltage power MOSFET having low on-resistance
#8 | 2006-06-15 ✅ Patent 8,513,732 granted on 2013-08-20High voltage power MOSFET having low on-resistance
#9 | 2006-05-23 ✅ Patent 7,049,194 granted on 2006-05-23Trench DMOS device with improved drain contact
#10 | 2006-03-28 ✅ Patent 7,019,360 granted on 2006-03-28High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source
#11 | 2006-01-31 ✅ Patent 6,992,350 granted on 2006-01-31High voltage power MOSFET having low on-resistance
#12 | 2005-12-27 ✅ Patent 6,979,621 granted on 2005-12-27Trench MOSFET having low gate charge
#13 | 2005-12-20 ✅ Patent 6,977,203 granted on 2005-12-20Method of forming narrow trenches in semiconductor substrates
#14 | 2005-11-10 ✅ Patent 7,242,078 granted on 2007-07-10Surface mount multichip devices
#15 | 2005-09-01 ✅ Patent 7,199,427 granted on 2007-04-03DMOS device with a programmable threshold voltage
#16 | 2005-07-26 ✅ Patent 6,921,938 granted on 2005-07-26Double diffused field effect transistor having reduced on-resistance
#17 | 2005-05-05 ✅ Patent 6,949,432 granted on 2005-09-27Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
#18 | 2005-04-26 ✅ Patent 6,884,683 granted on 2005-04-26Trench DMOS transistor having a zener diode for protection from electro-static discharge
#19 | 2005-04-19 ✅ Patent 6,882,573 granted on 2005-04-19DMOS device with a programmable threshold voltage
#20 | 2005-03-24 ✅ Patent 7,015,125 granted on 2006-03-21Trench MOSFET device with polycrystalline silicon source contact structure
#21 | 2005-03-01 ✅ Patent 6,861,337 granted on 2005-03-01Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes
#22 | 2005-02-24 ✅ Patent 7,224,027 granted on 2007-05-29High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon
#23 | 2005-02-22 ✅ Patent 6,858,510 granted on 2005-02-22Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
#24 | 2005-02-01 ✅ Patent 6,849,899 granted on 2005-02-01High speed trench DMOS
#25 | 2005-01-13 ✅ Patent 6,919,625 granted on 2005-07-19Surface mount multichip devices
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