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Assignee profile:

Episil Technologies Inc.

City:

Hsinchu

Country:

Taiwan

Published Applications:

16

Last publication date:

2016-04-28

Patent Grants:

16

Last grant date:

2016-11-29

Top Inventors for applications by Episil Technologies Inc.

These are the the leading inventors for applications assigned to Episil Technologies Inc.:

Recent patent applications by Episil Technologies Inc.

Episil Technologies Inc. based in Hsinchu, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2016-04-28 ✅ Patent 9,508,793 granted on 2016-11-29
US20160118378A1
Electricity

Semiconductor device and method of operating the same and structure for suppressing current leakage

 #2 | 2016-04-05 ✅ Patent 9,305,913 granted on 2016-04-05
US14828510
Electricity

Electrostatic discharge protection structure

 #3 | 2013-05-23 ✅ Patent 8,664,022 granted on 2014-03-04
US20130126923A1
Electricity

Submount for light emitting diode and method for fabricating the same

 #4 | 2012-11-08 ✅ Patent 8,785,969 granted on 2014-07-22
US20120280317A1
Electricity

Resurf structure and LDMOS device

 #5 | 2012-10-18 ✅ Patent 8,853,738 granted on 2014-10-07
US20120261752A1
Electricity

Power LDMOS device and high voltage device

 #6 | 2011-03-10 ✅ Patent 8,237,223 granted on 2012-08-07
US20110057262A1
Electricity

Semiconductor device

 #7 | 2009-03-05 ✅ Patent 7,560,343 granted on 2009-07-14
US20090061582A1
Electricity

Manufacturing method of non-volatile memory

 #8 | 2008-07-24 ✅ Patent 7,514,754 granted on 2009-04-07
US20080173951A1
Electricity

Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem

 #9 | 2008-07-24 ✅ Patent 7,411,271 granted on 2008-08-12
US20080173949A1
Electricity

Complementary metal-oxide-semiconductor field effect transistor

 #10 | 2008-07-24 ✅ Patent 7,538,396 granted on 2009-05-26
US20080173948A1
Electricity

Semiconductor device and complementary metal-oxide-semiconductor field effect transistor

 #11 | 2008-05-01 ✅ Patent 7,508,028 granted on 2009-03-24
US20080099818A1
Electricity

Non-volatile memory

 #12 | 2008-01-10 ✅ Patent 7,517,759 granted on 2009-04-14
US20080009118A1
Electricity

Method of fabricating metal oxide semiconductor device

 #13 | 2007-04-12 ✅ Patent 7,391,079 granted on 2008-06-24
US20070080396A1
Electricity

Metal oxide semiconductor device

 #14 | 2006-06-13 ✅ Patent 7,060,567 granted on 2006-06-13
US11161173
-

Method for fabricating trench power MOSFET

 #15 | 2006-04-20 ✅ Patent 7,084,033 granted on 2006-08-01
US20060081918A1
Electricity

Method for fabricating a trench power MOSFET

 #16 | 2005-06-23 ✅ Patent 7,294,550 granted on 2007-11-13
US20050133833A1
Electricity

Method of fabricating metal oxide semiconductor device

Also check out Episil Technologies Inc.'s (Hsinchu, Taiwan) applicant profile with 2 patent applications submitted.

AssigneeID:

365906 ⎘