Nippon Precision Circuits Inc.

City:

Tokyo

Country:

Japan

Published Applications:

Last publication date:

2006-10-05

Patent Grants:

Last grant date:

2007-04-17

Top Inventors for applications by Nippon Precision Circuits Inc.

These are the the leading inventors for applications assigned to Nippon Precision Circuits Inc.:

Akira Toyama 2 Chigasaki, Japan
Toshiaki Tsujikawa 1 Tokyo, Japan
Koryo Tei 1 Tokyo, Japan
Kaoru Kanehachi 1 Tokyo, Japan

Masataka Saitoh 1 Yamagata-ken, Japan
Yasuo Tarui 1 Setagaya-ku, Tokyo, Japan
Akira Toyama 1 Chigasaki-shi, Japan
Hiroyuki Kawanishi 1 Tokyo, Japan

Kazuo Sakamaki 1 Tokyo, Japan
Kazuo Sakamaki 1 Nasu-gun, Japan
Motohiro Yamazaki 1 Tokyo, Japan
Shinichi Watanabe 1 Tokyo, Japan

Shigeki Sakai 1 Tsukuba, Japan

Recent patent applications by Nippon Precision Circuits Inc.

Nippon Precision Circuits Inc. based in Tokyo, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2006-10-05 ✅ Patent 7,205,801 granted on 2007-04-17

US20060220715A1

Electricity

Power down circuit capable of a wide rage control signal regardless of the power supply voltage fluction

#2 | 2006-06-27 ✅ Patent 7,069,285 granted on 2006-06-27

US10094852

Decimation filter

#3 | 2006-03-16 ✅ Patent 7,496,169 granted on 2009-02-24

US20060056565A1

Electricity

Frequency synthesizer, pulse train generation apparatus and pulse train generation method

#4 | 2005-09-13 ✅ Patent 6,944,113 granted on 2005-09-13

US9871186

Method of controlling laser diode in optical disk player and circuit therefor

#5 | 2005-08-23 ✅ Patent 6,934,324 granted on 2005-08-23

US9934237

Zero value-detecting circuit

#6 | 2005-06-09 ✅ Patent 7,102,432 granted on 2006-09-05

US20050122169A1

Electricity

Class D amplifier

#7 | 2005-05-24 ✅ Patent 6,898,105 granted on 2005-05-24

US10453441

Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device

#8 | 2005-04-26 ✅ Patent 6,885,048 granted on 2005-04-26

US9801990

Transistor-type ferroelectric nonvolatile memory element

AssigneeID:

366703 ⎘