Assignee profile:

NEO Semiconductor, Inc.

City:

San Jose, California

Country:

United States

Published Applications:

23

Last publication date:

2023-08-24

Patent Grants:

23

Last grant date:

2026-06-16

Top Inventors for applications by NEO Semiconductor, Inc.

These are the the leading inventors for applications assigned to NEO Semiconductor, Inc.:

Recent patent applications by NEO Semiconductor, Inc.

NEO Semiconductor, Inc. based in San Jose, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-08-24 ✅ Patent 12,660,151 granted on 2026-06-16
US20230269926A1
Electricity

3D MEMORY CELLS AND ARRAY ARCHITECTURES

#2 | 2023-01-26 ✅ Patent 12,217,808 granted on 2025-02-04
US20230022531A1
Physics

Methods and apparatus for NAND flash memory

#3 | 2022-11-03 ✅ Patent 12,165,717 granted on 2024-12-10
US20220351790A1
Physics

Methods and apparatus for a novel memory array

#4 | 2022-02-10 ✅ Patent 12,142,329 granted on 2024-11-12
US20220044746A1
Physics

Methods and apparatus for NAND flash memory

#5 | 2022-01-27 ✅ Patent 12,002,525 granted on 2024-06-04
US20220028469A1
Physics

Methods and apparatus for NAND flash memory

#6 | 2021-12-16 ✅ Patent 11,972,811 granted on 2024-04-30
US20210391027A1
Physics

Methods and apparatus for NAND flash memory

#7 | 2021-10-21 ✅ Patent 12,100,460 granted on 2024-09-24
US20210327519A1
Physics

Methods and apparatus for NAND flash memory

#8 | 2021-01-14 ✅ Patent 11,232,835 granted on 2022-01-25
US20210012834A1
Physics

Methods and apparatus for reading NAND flash memory

#9 | 2020-05-21 ✅ Patent 11,056,190 granted on 2021-07-06
US20200160910A1
Physics

Methods and apparatus for NAND flash memory

#10 | 2019-12-12 ✅ Patent 10,734,088 granted on 2020-08-04
US20190378584A1
Physics

CMOS anti-fuse cell

#11 | 2019-01-24 ✅ Patent 10,395,744 granted on 2019-08-27
US20190027228A1
Physics

CMOS anti-fuse cell

#12 | 2018-06-14 ✅ Patent 10,199,104 granted on 2019-02-05
US20180166139A1
Physics

Method and apparatus for providing multi-page read and write using SRAM and nonvolatile memory devices

#13 | 2018-01-18 ✅ Patent 10,109,363 granted on 2018-10-23
US20180019017A1
Physics

CMOS anti-fuse cell

#14 | 2017-12-07 ✅ Patent 10,163,509 granted on 2018-12-25
US20170352419A1
Physics

Method and apparatus for storing information using a memory able to perform both NVM and DRAM functions

#15 | 2017-06-22 ✅ Patent 10,163,916 granted on 2018-12-25
US20170179138A1
Electricity

Compact anti-fuse memory cell using CMOS process

#16 | 2016-10-27 ✅ Patent 9,715,933 granted on 2017-07-25
US20160314839A1
Physics

Dual function hybrid memory cell

#17 | 2016-10-20 ✅ Patent 9,972,392 granted on 2018-05-15
US20160307637A1
Physics

SONOS byte-erasable EEPROM

#18 | 2016-10-13 ✅ Patent 9,793,001 granted on 2017-10-17
US20160300622A1
Physics

CMOS anti-fuse cell

#19 | 2016-10-06 ✅ Patent 9,704,577 granted on 2017-07-11
US20160293256A1
Physics

Two transistor SONOS flash memory

#20 | 2016-03-17 ✅ Patent 9,928,911 granted on 2018-03-27
US20160078938A1
Physics

Method and apparatus for providing multi-page read and write using SRAM and nonvolatile memory devices

#21 | 2016-03-10 ✅ Patent 10,242,743 granted on 2019-03-26
US20160071599A1
Physics

Method and apparatus for writing nonvolatile memory using multiple-page programming

#22 | 2016-03-10 ✅ Patent 10,008,265 granted on 2018-06-26
US20160071591A1
Physics

Method and apparatus for providing three-dimensional integrated nonvolatile memory (NVM) and dynamic random access memory (DRAM) memory device

#23 | 2016-03-10 ✅ Patent 9,761,310 granted on 2017-09-12
US20160071590A1
Physics

Method and apparatus for storing information using a memory able to perform both NVM and DRAM functions

Also check out NEO Semiconductor, Inc.'s (San Jose, United States) applicant profile with 29 patent applications submitted.

AssigneeID:

371045 ⎘