Assignee profile:

SCIOCS COMPANY LIMITED

City:

Ibaraki

Country:

Japan

Published Applications:

18

Last publication date:

2021-05-06

Patent Grants:

18

Last grant date:

2022-10-18

Top Inventors for applications by SCIOCS COMPANY LIMITED

These are the the leading inventors for applications assigned to SCIOCS COMPANY LIMITED:

Recent patent applications by SCIOCS COMPANY LIMITED

SCIOCS COMPANY LIMITED based in Ibaraki, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2021-05-06 ✅ Patent 11,473,907 granted on 2022-10-18
US20210131800A1
Physics

Method for manufacturing semiconductor structure, inspection method, and semiconductor structure

#2 | 2020-04-23 ✅ Patent 10,818,757 granted on 2020-10-27
US20200127101A1
Electricity

Nitride semiconductor substrate, semiconductor device, and method for manufacturing nitride semiconductor substrate

#3 | 2020-04-23 ✅ Patent 10,770,554 granted on 2020-09-08
US20200127100A1
Electricity

Nitride semiconductor substrate, semiconductor device, and method for manufacturing nitride semiconductor substrate

#4 | 2020-01-30 ✅ Patent 11,008,671 granted on 2021-05-18
US20200032417A1
Chemistry; metallurgy

Nitride crystal

#5 | 2020-01-30 ✅ Patent 11,339,053 granted on 2022-05-24
US20200031668A1
Chemistry; metallurgy

Nitride crystal

#6 | 2020-01-02 ✅ Patent 11,094,539 granted on 2021-08-17
US20200006049A1
Electricity

Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate

#7 | 2019-12-19 ✅ Patent 11,377,756 granted on 2022-07-05
US20190382920A1
Chemistry; metallurgy

Nitride crystal substrate and method for manufacturing the same

#8 | 2019-11-14 ✅ Patent 10,998,188 granted on 2021-05-04
US20190348276A1
Electricity

Gallium nitride laminated substrate and semiconductor device

#9 | 2019-10-24 ✅ Patent 10,978,294 granted on 2021-04-13
US20190326111A1
Electricity

Semi-insulating crystal, N-type semiconductor crystal and P-type semiconductor crystal

#10 | 2019-09-05 ✅ Patent 11,380,765 granted on 2022-07-05
US20190273139A1
Electricity

Structure and intermediate structure

#11 | 2019-09-05 ✅ Patent 10,707,309 granted on 2020-07-07
US20190273138A1
Electricity

GaN laminate and method of manufacturing the same

#12 | 2019-09-05 ✅ Patent 10,665,683 granted on 2020-05-26
US20190273137A1
Electricity

GaN material and method of manufacturing semiconductor device

#13 | 2019-09-05 ✅ Patent 10,903,074 granted on 2021-01-26
US20190272990A1
Electricity

GaN laminate and method of manufacturing the same

#14 | 2019-06-27 ✅ Patent 10,978,296 granted on 2021-04-13
US20190198312A1
Electricity

Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate

#15 | 2019-06-20 ✅ Patent 10,797,181 granted on 2020-10-06
US20190189808A1
Electricity

Semiconductor device and method for manufacturing the same

#16 | 2019-04-25 ✅ Patent 10,584,031 granted on 2020-03-10
US20190119112A1
Chemistry; metallurgy

Nitride crystal substrate

#17 | 2017-11-30 ✅ Patent 10,325,793 granted on 2019-06-18
US20170345694A1
Electricity

Method for producing crystal substrate

#18 | 2016-12-01 ✅ Patent 10,538,858 granted on 2020-01-21
US20160348272A1
Chemistry; metallurgy

Method for manufacturing group 13 nitride crystal and group 13 nitride crystal

Also check out SCIOCS COMPANY LIMITED's (Ibaraki, Japan) applicant profile with 21 patent applications submitted.

AssigneeID:

379222 ⎘