Ibaraki
Japan
18
2021-05-06
18
2022-10-18
These are the the leading inventors for applications assigned to SCIOCS COMPANY LIMITED:
SCIOCS COMPANY LIMITED based in Ibaraki, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Method for manufacturing semiconductor structure, inspection method, and semiconductor structure
#2 | 2020-04-23 ✅ Patent 10,818,757 granted on 2020-10-27Nitride semiconductor substrate, semiconductor device, and method for manufacturing nitride semiconductor substrate
#3 | 2020-04-23 ✅ Patent 10,770,554 granted on 2020-09-08Nitride semiconductor substrate, semiconductor device, and method for manufacturing nitride semiconductor substrate
#4 | 2020-01-30 ✅ Patent 11,008,671 granted on 2021-05-18Nitride crystal
#5 | 2020-01-30 ✅ Patent 11,339,053 granted on 2022-05-24Nitride crystal
#6 | 2020-01-02 ✅ Patent 11,094,539 granted on 2021-08-17Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate
#7 | 2019-12-19 ✅ Patent 11,377,756 granted on 2022-07-05Nitride crystal substrate and method for manufacturing the same
#8 | 2019-11-14 ✅ Patent 10,998,188 granted on 2021-05-04Gallium nitride laminated substrate and semiconductor device
#9 | 2019-10-24 ✅ Patent 10,978,294 granted on 2021-04-13Semi-insulating crystal, N-type semiconductor crystal and P-type semiconductor crystal
#10 | 2019-09-05 ✅ Patent 11,380,765 granted on 2022-07-05Structure and intermediate structure
#11 | 2019-09-05 ✅ Patent 10,707,309 granted on 2020-07-07GaN laminate and method of manufacturing the same
#12 | 2019-09-05 ✅ Patent 10,665,683 granted on 2020-05-26GaN material and method of manufacturing semiconductor device
#13 | 2019-09-05 ✅ Patent 10,903,074 granted on 2021-01-26GaN laminate and method of manufacturing the same
#14 | 2019-06-27 ✅ Patent 10,978,296 granted on 2021-04-13Nitride semiconductor substrate, semiconductor laminate, laminated structure, method for manufacturing nitride semiconductor substrate and method for manufacturing semiconductor laminate
#15 | 2019-06-20 ✅ Patent 10,797,181 granted on 2020-10-06Semiconductor device and method for manufacturing the same
#16 | 2019-04-25 ✅ Patent 10,584,031 granted on 2020-03-10Nitride crystal substrate
#17 | 2017-11-30 ✅ Patent 10,325,793 granted on 2019-06-18Method for producing crystal substrate
#18 | 2016-12-01 ✅ Patent 10,538,858 granted on 2020-01-21Method for manufacturing group 13 nitride crystal and group 13 nitride crystal
Also check out SCIOCS COMPANY LIMITED's (Ibaraki, Japan) applicant profile with 21 patent applications submitted.
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