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Assignee profile:

Elite Semiconductor Memory Technology, Inc.

City:

Country:

Taiwan

Published Applications:

Last publication date:

2020-03-10

Patent Grants:

Last grant date:

2020-03-10

Top Inventors for applications by Elite Semiconductor Memory Technology, Inc.

These are the the leading inventors for applications assigned to Elite Semiconductor Memory Technology, Inc.:

Chung Zen Chen 2 Hsinchu, Taiwan
Chung-Zen Chen 2 Hsinchu City, Taiwan
Chien-Yi Chang 2 Hsinchu, Taiwan
Yi-Heng Liu 1 Taipei, Taiwan

Chun-Yuan Yeh 1 Zhubei City, Taiwan
Yi-Heng Liu 1 Taipei City, Taiwan
Chien-Yi Chang 1 Hsinchu City, Taiwan
Yi-Hsiu Chen 1 Chu-Pei, Taiwan

I-Hsiu Ho 1 Zhubei, Taiwan
YI-HSIU CHEN 1 CHU-PEI CITY, Taiwan
Chih-Hao Chen 1 New Taipei, Taiwan
TAKAO AKAOGI 1 CUPERTINO, CA United States

YIDER WU 1 CHU-PEI CITY, Taiwan
Chun-Yuan Yeh 1 Zhubei, Taiwan
Yider Wu 1 Chu-Pei, Taiwan
HUNG-HUI LAI 1 HSINCHU CITY, Taiwan

Dar-Woei Wang 1 Hsinchu County, Taiwan

Recent patent applications by Elite Semiconductor Memory Technology, Inc.

Elite Semiconductor Memory Technology, Inc. based in , TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2020-03-10 ✅ Patent 10,587,196 granted on 2020-03-10

US16282352

Electricity

Constant on-time controller and buck regulator device using the same

#2 | 2020-03-03 ✅ Patent 10,580,505 granted on 2020-03-03

US16281517

Physics

Erasing method used in flash memory

#3 | 2014-03-20 ✅ Patent 10,297,607 granted on 2019-05-21

US20140078832A1

Electricity

Non-volatile memory having discrete isolation structure and SONOS memory cell, method of operating the same, and method of manufacturing the same

#4 | 2009-09-17 ✅ Patent 7,759,986 granted on 2010-07-20

US20090231016A1

Electricity

Gate oxide protected I/O circuit

#5 | 2008-03-06 ✅ Patent 7,453,748 granted on 2008-11-18

US20080056037A1

Physics

DRAM bit line precharge voltage generator

#6 | 2008-02-14 ✅ Patent 7,443,231 granted on 2008-10-28

US20080036530A1

Physics

Low power reference voltage circuit

#7 | 2007-11-08 ✅ Patent 7,547,941 granted on 2009-06-16

US20070257307A1

Electricity

NAND non-volatile two-bit memory and fabrication method

#8 | 2006-05-11 ✅ Patent 7,518,424 granted on 2009-04-14

US20060097764A1

Electricity

Slew rate controlled output circuit

#9 | 2005-09-29 ✅ Patent 7,305,513 granted on 2007-12-04

US20050216652A1

Physics

Circuit for preventing nonvolatile memory from over-erase

AssigneeID:

401279 ⎘