Japan
12
2009-06-04
12
2010-04-20
These are the the leading inventors for applications assigned to Renesas Technology Corp.:
Renesas Technology Corp. based in , JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
#2 | 2009-04-16 ✅ Patent 7,772,678 granted on 2010-08-10Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen
#3 | 2008-11-27 ✅ Patent 7,692,997 granted on 2010-04-06Semiconductor integrated circuit device
#4 | 2008-11-20 ✅ Patent 7,696,608 granted on 2010-04-13Semiconductor integrated circuit device and process for manufacturing the same
#5 | 2008-05-08 ✅ Patent 7,687,907 granted on 2010-03-30Semiconductor device and manufacturing method of the same
#6 | 2008-03-20 ✅ Patent 7,685,455 granted on 2010-03-23Semiconductor integrated circuit which generates internal clock signal for fetching input data synchronously with the internal clock signal without decrease of timing margin
#7 | 2007-08-02 ✅ Patent 7,446,625 granted on 2008-11-04Narrow impedance conversion device
#8 | 2007-03-08 ✅ Patent 7,688,303 granted on 2010-03-30Liquid crystal display controller and liquid crystal display device
#9 | 2006-10-12 ✅ Patent 7,692,641 granted on 2010-04-06Display driver and display driving method
#10 | 2006-08-17 ✅ Patent 7,372,112 granted on 2008-05-13Semiconductor device, process for producing the same and process for producing metal compound thin film
#11 | 2006-07-06 ✅ Patent 7,419,920 granted on 2008-09-02Metal thin film and semiconductor comprising a metal thin film
#12 | 2005-06-02 ✅ Patent 7,482,234 granted on 2009-01-27Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere
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