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Assignee profile:

Hitachi VLSI Engineering Corp.

City:

Tokyo

Country:

Japan

Published Applications:

4

Last publication date:

2008-08-28

Patent Grants:

4

Last grant date:

2009-03-03

Top Inventors for applications by Hitachi VLSI Engineering Corp.

These are the the leading inventors for applications assigned to Hitachi VLSI Engineering Corp.:

Yasuhiro Kasama 2 Tokyo, Japan
Sinichi Miyatake 2 Tokyo, Japan
Shinji Udo 2 Akishima, Japan
Yuji Sakai 2 Machida, Japan

Yasunori Yamaguchi 2 Tokyo, Japan
Masashi Horiguchi 2 Kawasaki, Japan
Makoto Morino 2 Akishima, Japan
Hirokazu Saito 2 Tokorozawa, Japan

Hiroshi Yoshioka 2 Akishima, Japan
Atsushi Kumata 2 Kodaira, Japan
Kazuyuki Miyazawa 2 Iruma, Japan
Jiro Sawada 2 Kokubunji, Japan

Tetsurou Matsumoto 2 Higashiyamato, Japan
Mitsuhiro Takano 2 Tokorozawa, Japan
Shinichi Ikenaga 2 Koganei, Japan
Eiji Miyamoto 2 Ohme, Japan

Kazuhiko Kajigaya 2 Iruma, Japan
Takashi Yamazaki 2 Ohme, Japan
Jun Etoh 2 Hachioji, Japan
Akira Endo 2 Hachioji, Japan

Manabu Tsunozaki 2 Ohme, Japan
Ryoichi Hori 2 Tokyo, Japan
Kazuyoshi Oshima 2 Ohme, Japan
Tomotsugu Shimmyo 1 Kawagoe, Japan

Keisuke Funatsu 1 Ohme, Japan
Nobuo Owada 1 Ohme, Japan
Yoshihiro Ikeda 1 Ohme, Japan
Hiromichi ENAMI 1 Tachikawa, Japan

Toru Kaga 1 Urawa, Japan
Atsushi Kumata 1 Tokyo, Japan
Jiroh Sakaguchi 1 Tama, Japan
Tetsurou Matsumoto 1 Tokyo, Japan

Mitsuhiro Takano 1 Tokorozawa-shi, Japan
Eiji Miyamoto 1 Tokyo, Japan
Hideo Aoki 1 Ohme, Japan
Sinichi Suzuki 1 Ohme, Japan

Akinori Matsuo 1 Higashiyamato, Japan
Hisahiro Moriuchi 1 Tanashi, Japan
Hiroshi Yoshioka 1 Tokyo, Japan
Makoto Ogasawara 1 Ohme, Japan

Toshifumi Takeda 1 Kodaira, Japan
Akira ENDO 1 Tokyo, Japan
Shinichi Ikenaga 1 Tokyo, Japan
Isamu Asano 1 Ohme, Japan

Manabu Tsunozaki 1 Tokyo, Japan
Fumio Ootsuka 1 Ohme, Japan
Masatoshi Tsuneoka 1 Ohme, Japan
Shoji YOSHIDA 1 Akishima, Japan

Yuji SAKAI 1 Tokyo, Japan
Takayoshi Kogano 1 Iruma, Japan
Tunehiko Tubone 1 Kudamatsu, Japan
Jun Etoh 1 Tokyo, Japan

Kenichi KURODA 1 Tachikawa, Japan
Nobuhiro Otsuka 1 Kokubunji, Japan
Kazuyuki Miyazawa 1 Iruma-shi, Japan
Makoto Morino 1 Tokyo, Japan

Masashi HORIGUCHI 1 Kawasaki-shi, Japan
Tsuyoshi Tamaru 1 Ohme, Japan
Kazuyoshi Oshima 1 Tokyo, Japan
Kazuyoshi Torii 1 Kodaira, Japan

Ken Tsugane 1 Ohme, Japan
Seiichirou Shirai 1 Hamura-machi, Japan
Atsushi Wakahara 1 Ohme, Japan
Mitsuaki Horiuchi 1 Hachioji, Japan

Hiroyuki Akimori 1 Ohme, Japan
Masakazu Sagawa 1 Ohme, Japan
Hidetsugu Ogishi 1 Hachioji, Japan
Osamu Kasahara 1 Hinode-machi, Japan

Yoshinao Kawasaki 1 Yamaguchi, Japan
Hirokazu Saito 1 Tokorozawa-shi, Japan
Masaki Shirai 1 Sayama, Japan
Takashi Yamazaki 1 Tokyo, Japan

Osamu Tsuchiya 1 Ohme, Japan
Jun Sugiura 1 Musashino, Japan
Kazuhiko Kajigaya 1 Iruma-shi, Japan
Jiro Sawada 1 Tokyo, Japan

Shinji Udo 1 Tokyo, Japan

Recent patent applications by Hitachi VLSI Engineering Corp.

Hitachi VLSI Engineering Corp. based in Tokyo, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2008-08-28 ✅ Patent 7,499,340 granted on 2009-03-03

US20080205111A1

Semiconductor memory device and defect remedying method thereof

#2 | 2006-02-21 ✅ Patent 7,002,830 granted on 2006-02-21

US10694085

Semiconductor integrated circuit device

#3 | 2005-05-24 ✅ Patent 6,898,130 granted on 2005-05-24

US10683260

Semiconductor memory device and defect remedying method thereof

#4 | 2005-05-17 ✅ Patent 6,894,334 granted on 2005-05-17

US10376329

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

AssigneeID:

413667 ⎘