Force-MOS Technology Corp.

City:

Country:

Taiwan

Published Applications:

Last publication date:

2009-12-03

Patent Grants:

Last grant date:

2011-01-04

Top Inventors for applications by Force-MOS Technology Corp.

These are the the leading inventors for applications assigned to Force-MOS Technology Corp.:

Fwu-Iuan Hshieh 2 Saratoga, CA United States

Recent patent applications by Force-MOS Technology Corp.

Force-MOS Technology Corp. based in , TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2009-12-03 ✅ Patent 7,863,685 granted on 2011-01-04

US20090294859A1

Electricity

Trench MOSFET with embedded junction barrier Schottky diode

#2 | 2009-04-30 ✅ Patent 7,633,121 granted on 2009-12-15

US20090108338A1

Electricity

Trench MOSFET with implanted drift region

AssigneeID:

421708 ⎘