Assignee profile:

Air Water Inc.

City:

Country:

Japan

Published Applications:

11

Last publication date:

2019-06-13

Patent Grants:

11

Last grant date:

2020-02-18

Top Inventors for applications by Air Water Inc.

These are the the leading inventors for applications assigned to Air Water Inc.:

Recent patent applications by Air Water Inc.

Air Water Inc. based in , JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2019-06-13 ✅ Patent 10,563,307 granted on 2020-02-18
US20190177852A1
Chemistry; metallurgy

Method for manufacturing substrate

#2 | 2018-02-22 ✅ Patent 10,186,421 granted on 2019-01-22
US20180053647A1
Electricity

Composite semiconductor substrate

#3 | 2017-08-17 ✅ Patent 10,186,585 granted on 2019-01-22
US20170236907A1
Electricity

Semiconductor device and method for manufacturing the same

#4 | 2014-04-17 ✅ Patent 9,453,277 granted on 2016-09-27
US20140102593A1
Chemistry; metallurgy

Method of heat treatment and the directions for use of furnace of heat treatment

#5 | 2014-02-20 ✅ Patent 8,906,786 granted on 2014-12-09
US20140051235A1
Electricity

Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same

#6 | 2013-08-22 ✅ Patent 9,562,533 granted on 2017-02-07
US20130216405A1
Mechanical engineering

Cryogenic pump for liquefied gases

#7 | 2013-02-14 ✅ Patent 8,986,448 granted on 2015-03-24
US20130040103A1
Electricity

Method of manufacturing single crystal 3C-SiC substrate and single crystal 3C-SiC substrate obtained from the manufacturing method

#8 | 2011-06-30 ✅ Patent 8,758,856 granted on 2014-06-24
US20110159184A1
Chemistry; metallurgy

Method of fluoridation and directions for use of a unit of fluoridation

#9 | 2011-04-21 ✅ Patent 8,563,442 granted on 2013-10-22
US20110089433A1
Electricity

Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate

#10 | 2010-10-07 ✅ Patent 8,603,901 granted on 2013-12-10
US20100252837A1
Electricity

Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same

#11 | 2007-08-02 ✅ Patent 7,691,203 granted on 2010-04-06
US20070175394A1
Chemistry; metallurgy

Film forming apparatus

AssigneeID:

425136 ⎘