Santa Clara, California
United States
15
2010-06-29
15
2010-06-29
These are the the leading inventors for applications assigned to Qspeed Semiconductor Inc.:
Qspeed Semiconductor Inc. based in Santa Clara, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Circuit and method for driving a junction field effect transistor
#2 | 2010-02-02 ✅ Patent 7,655,964 granted on 2010-02-02Programmable junction field effect transistor and method for programming same
#3 | 2009-10-27 ✅ Patent 7,608,888 granted on 2009-10-27Field effect transistor
#4 | 2008-11-18 ✅ Patent 7,452,763 granted on 2008-11-18Method for a junction field effect transistor with reduced gate capacitance
#5 | 2008-08-26 ✅ Patent 7,417,266 granted on 2008-08-26MOSFET having a JFET embedded as a body diode
#6 | 2008-03-25 ✅ Patent 7,348,826 granted on 2008-03-25Composite field effect transistor
#7 | 2007-09-11 ✅ Patent 7,268,378 granted on 2007-09-11Structure for reduced gate capacitance in a JFET
#8 | 2007-09-04 ✅ Patent 7,265,398 granted on 2007-09-04Method and structure for composite trench fill
#9 | 2007-08-28 ✅ Patent 7,262,461 granted on 2007-08-28JFET and MESFET structures for low voltage, high current and high frequency applications
#10 | 2007-07-03 ✅ Patent 7,238,976 granted on 2007-07-03Schottky barrier rectifier and method of manufacturing the same
#11 | 2007-06-28 ✅ Patent 7,696,540 granted on 2010-04-13Structure and method for a fast recovery rectifier structure
#12 | 2007-06-28 ✅ Patent 7,696,598 granted on 2010-04-13Ultrafast recovery diode
#13 | 2007-06-05 ✅ Patent 7,227,242 granted on 2007-06-05Structure and method for enhanced performance in semiconductor substrates
#14 | 2007-05-22 ✅ Patent 7,220,661 granted on 2007-05-22Method of manufacturing a Schottky barrier rectifier
#15 | 2007-05-01 ✅ Patent 7,211,845 granted on 2007-05-01Multiple doped channel in a multiple doped gate junction field effect transistor
425436 ⎘