Force-MOS Technology Corp.

City:

Country:

Cayman Islands

Published Applications:

Last publication date:

2010-07-01

Patent Grants:

Last grant date:

2011-09-20

Top Inventors for applications by Force-MOS Technology Corp.

These are the the leading inventors for applications assigned to Force-MOS Technology Corp.:

Fwu-Iuan Hshieh 4 Saratoga, CA United States

Recent patent applications by Force-MOS Technology Corp.

Force-MOS Technology Corp. based in , KY has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2010-07-01 ✅ Patent 8,022,471 granted on 2011-09-20

US20100163975A1

Electricity

Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures

#2 | 2010-02-25 ✅ Patent 7,929,321 granted on 2011-04-19

US20100044796A1

Electricity

Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications

#3 | 2008-07-31 ✅ Patent 7,800,185 granted on 2010-09-21

US20080179662A1

Electricity

Closed trench MOSFET with floating trench rings as termination

#4 | 2008-06-05 ✅ Patent 7,812,409 granted on 2010-10-12

US20080128829A1

Electricity

Trench MOSFET with cell layout, ruggedness, truncated corners

AssigneeID:

431483 ⎘