Taiwan
24
2016-12-27
24
2016-12-27
These are the the leading inventors for applications assigned to Force Mos Technology Co., Ltd.:
Force Mos Technology Co., Ltd. based in , TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Trench MOSFET with shielded gate and diffused drift region
#2 | 2016-06-09 ✅ Patent 9,412,810 granted on 2016-08-09Super-junction trench MOSFETs with closed cell layout having shielded gate
#3 | 2016-05-10 ✅ Patent 9,337,328 granted on 2016-05-10Super-junction trench MOSFETs with closed cell layout
#4 | 2016-03-22 ✅ Patent 9,293,527 granted on 2016-03-22Super-junction trench MOSFET structure
#5 | 2015-11-05 ✅ Patent 9,530,867 granted on 2016-12-27Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench
#6 | 2013-07-04 ✅ Patent 8,614,482 granted on 2013-12-24Semiconductor power device having improved termination structure for mask saving
#7 | 2013-04-18 ✅ Patent 8,466,514 granted on 2013-06-18Semiconductor power device integrated with improved gate source ESD clamp diodes
#8 | 2012-12-06 ✅ Patent 8,384,194 granted on 2013-02-26Power semiconductor device comprising a plurality of trench IGBTs
#9 | 2012-03-29 ✅ Patent 8,373,224 granted on 2013-02-12Super-junction trench MOSFET with resurf stepped oxides and trenched contacts
#10 | 2012-03-15 ✅ Patent 8,372,717 granted on 2013-02-12Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contacts
#11 | 2012-03-15 ✅ Patent 8,373,225 granted on 2013-02-12Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes
#12 | 2012-01-26 ✅ Patent 8,530,313 granted on 2013-09-10Method of manufacturing trench MOSFET structures using three masks process
#13 | 2011-12-29 ✅ Patent 8,525,255 granted on 2013-09-03Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination
#14 | 2011-11-03 ✅ Patent 8,164,114 granted on 2012-04-24Semiconductor devices with gate-source ESD diode and gate-drain clamp diode
#15 | 2011-10-13 ✅ Patent 8,378,392 granted on 2013-02-19Trench MOSFET with body region having concave-arc shape
#16 | 2011-09-29 ✅ Patent 8,264,035 granted on 2012-09-11Avalanche capability improvement in power semiconductor devices
#17 | 2011-07-14 ✅ Patent 8,178,922 granted on 2012-05-15Trench MOSFET with ultra high cell density and manufacture thereof
#18 | 2011-07-14 ✅ Patent 8,148,773 granted on 2012-04-03Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
#19 | 2011-07-07 ✅ Patent 8,314,000 granted on 2012-11-20LDMOS with double LDD and trenched drain
#20 | 2011-01-13 ✅ Patent 8,058,685 granted on 2011-11-15Trench MOSFET structures using three masks process
#21 | 2010-11-18 ✅ Patent 8,004,009 granted on 2011-08-23Trench MOSFETS with ESD Zener diode
#22 | 2010-11-04 ✅ Patent 8,072,000 granted on 2011-12-06Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
#23 | 2010-07-15 ✅ Patent 8,426,913 granted on 2013-04-23Integrated trench MOSFET with trench Schottky rectifier
#24 | 2010-05-20 ✅ Patent 8,004,036 granted on 2011-08-23MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvement
442843 ⎘