Force—MOS Technology Corporation

City:

Country:

Taiwan

Published Applications:

Last publication date:

2010-12-09

Patent Grants:

Last grant date:

2011-11-15

Top Inventors for applications by Force—MOS Technology Corporation

These are the the leading inventors for applications assigned to Force—MOS Technology Corporation:

Fwu-Iuan Hshieh 2 Saratoga, CA United States

Recent patent applications by Force—MOS Technology Corporation

Force—MOS Technology Corporation based in , TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2010-12-09 ✅ Patent 8,058,670 granted on 2011-11-15

US20100308370A1

Electricity

Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up

#2 | 2009-08-20 ✅ Patent 8,159,021 granted on 2012-04-17

US20090206395A1

Electricity

Trench MOSFET with double epitaxial structure

AssigneeID:

445670 ⎘