Force Mos Technology Co., Ltd.

City:

Banciao

Country:

Taiwan

Published Applications:

Last publication date:

2013-08-22

Patent Grants:

Last grant date:

2014-05-13

Top Inventors for applications by Force Mos Technology Co., Ltd.

These are the the leading inventors for applications assigned to Force Mos Technology Co., Ltd.:

Fu-Yuan Hsieh 4 Banciao, Taiwan
FU-YUAN HSIEH 3 Banciao City, Taiwan
Fu-Yuan HSIEH 1 , United States
Fu-Yuan HSIEH 1 Kaohsiung, Taiwan

FORCE MOS TECHNOLOGY CO., LTD. 1 , United States

Recent patent applications by Force Mos Technology Co., Ltd.

Force Mos Technology Co., Ltd. based in Banciao, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2013-08-22 ✅ Patent 8,722,434 granted on 2014-05-13

US20130214350A1

Electricity

Integrated trench MOSFET with trench Schottky rectifier

#2 | 2012-12-13 ✅ Patent 8,598,624 granted on 2013-12-03

US20120313141A1

Electricity

Fast switching hybrid IGBT device with trenched contacts

#3 | 2012-12-06 ✅ Patent 8,563,381 granted on 2013-10-22

US20120309148A1

Electricity

Method for manufacturing a power semiconductor device

#4 | 2011-06-30 ✅ Patent 8,067,800 granted on 2011-11-29

US20110156139A1

Electricity

Super-junction trench MOSFET with resurf step oxide and the method to make the same

#5 | 2011-03-24 ✅ Patent 8,105,903 granted on 2012-01-31

US20110070708A1

Electricity

Method for making a trench MOSFET with shallow trench structures

AssigneeID:

446205 ⎘