Force Mos Technology., Ltd.

City:

Country:

Taiwan

Published Applications:

Last publication date:

2011-07-28

Patent Grants:

Last grant date:

2013-02-19

Top Inventors for applications by Force Mos Technology., Ltd.

These are the the leading inventors for applications assigned to Force Mos Technology., Ltd.:

Fu-Yuan HSIEH 1 Kaohsiung, Taiwan

Recent patent applications by Force Mos Technology., Ltd.

Force Mos Technology., Ltd. based in , TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2011-07-28 ✅ Patent 8,378,411 granted on 2013-02-19

US20110180844A1

Electricity

Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation

AssigneeID:

462118 ⎘