Force-MOS Technology Corporation

City:

Hsinchu

Country:

Taiwan

Published Applications:

Last publication date:

2010-04-08

Patent Grants:

Last grant date:

2013-06-11

Top Inventors for applications by Force-MOS Technology Corporation

These are the the leading inventors for applications assigned to Force-MOS Technology Corporation:

Fwu-Iuan Hshieh 1 Saratoga, CA United States

Recent patent applications by Force-MOS Technology Corporation

Force-MOS Technology Corporation based in Hsinchu, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2010-04-08 ✅ Patent 8,461,001 granted on 2013-06-11

US20100087039A1

Electricity

Methods for manufacturing trench MOSFET with implanted drift region

AssigneeID:

466210 ⎘