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Assignee profile:

PFC Device Corp.

City:

New Taipei

Country:

Taiwan

Published Applications:

Last publication date:

2015-02-19

Patent Grants:

Last grant date:

2015-03-31

Top Inventors for applications by PFC Device Corp.

These are the the leading inventors for applications assigned to PFC Device Corp.:

Hung-Hsin Kuo 12 New Taipei, Taiwan
Mei-Ling Chen 11 New Taipei, Taiwan
Hung-Hsin Kuo 11 New Taipei City, Taiwan
Mei-Ling Chen 10 New Taipei City, Taiwan

Kuo-Liang Chao 9 New Taipei, Taiwan
Kuo-Liang Chao 7 New Taipei City, Taiwan
PFC DEVICE CORP. 3 New Taipei City, Taiwan
Lung-Ching Kao 3 New Taipei, Taiwan

Tse-Chuan Su 3 New Taipei City, Taiwan
Kou-Liang Chao 3 New Taipei City, Taiwan
Tse-Chuan Su 3 New Taipei, Taiwan
Hung-Hsin KUO 2 Taipei, Taiwan

Lung-Ching Kao 2 New Taipei City, Taiwan
Kou-Liang Chao 2 New Taipei, Taiwan
Kou-Liang CHAO 1 Taipei, Taiwan
Mei-Ling CHEN 1 Taipei, Taiwan

Tse-Chuan SU 1 Taipei, Taiwan

Recent patent applications by PFC Device Corp.

PFC Device Corp. based in New Taipei, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2015-02-19 ✅ Patent 8,993,427 granted on 2015-03-31

US20150050791A1

Electricity

Method for manufacturing rectifier with vertical MOS structure

#2 | 2014-10-16 ✅ Patent 9,029,235 granted on 2015-05-12

US20140308799A1

Electricity

Trench isolation MOS P-N junction diode device and method for manufacturing the same

#3 | 2014-10-02 ✅ Patent 9,064,904 granted on 2015-06-23

US20140295628A1

Electricity

MOS P-N junction Schottky diode device and method for manufacturing the same

#4 | 2014-05-15 ✅ Patent 8,853,748 granted on 2014-10-07

US20140131793A1

Electricity

Rectifier with vertical MOS structure

#5 | 2014-04-22 ✅ Patent 8,704,298 granted on 2014-04-22

US13831195

MOS diode with termination structure and method for manufacturing the same

#6 | 2014-03-20 ✅ Patent 8,890,279 granted on 2014-11-18

US20140077328A1

Electricity

Trench Schottky rectifier device and method for manufacturing the same

#7 | 2014-01-30 ✅ Patent 8,753,963 granted on 2014-06-17

US20140030882A1

Electricity

Manufacturing method of multi-trench termination structure for semiconductor device

#8 | 2014-01-02 ✅ Patent 8,735,228 granted on 2014-05-27

US20140004681A1

Electricity

Trench isolation MOS P-N junction diode device and method for manufacturing the same

#9 | 2013-09-26 ✅ Patent 8,809,946 granted on 2014-08-19

US20130249043A1

Electricity

Wide trench termination structure for semiconductor device

#10 | 2013-09-05 ✅ Patent 8,680,590 granted on 2014-03-25

US20130228891A1

Electricity

Multi-trench termination structure for semiconductor device

#11 | 2013-07-04 ✅ Patent 8,921,949 granted on 2014-12-30

US20130168779A1

Electricity

MOS P-N junction diode with enhanced response speed and manufacturing method thereof

#12 | 2013-05-23 ✅ Patent 8,728,878 granted on 2014-05-20

US20130130459A1

Electricity

MOS P-N junction diode device and method for manufacturing the same

#13 | 2013-05-16 ✅ Patent 8,927,401 granted on 2015-01-06

US20130122695A1

Electricity

Trench Schottky diode and method for manufacturing the same

#14 | 2012-10-18 ✅ Patent 8,664,701 granted on 2014-03-04

US20120261751A1

Electricity

Rectifier with vertical MOS structure

Also check out PFC Device Corp.'s (New Taipei, Taiwan) applicant profile with 12 patent applications submitted.

AssigneeID:

476034 ⎘