Dowa Electroncs Materials Co., Ltd.

City:

Tokyo

Country:

Japan

Published Applications:

Last publication date:

2011-10-20

Patent Grants:

Last grant date:

2014-05-27

Top Inventors for applications by Dowa Electroncs Materials Co., Ltd.

These are the the leading inventors for applications assigned to Dowa Electroncs Materials Co., Ltd.:

Masahito Miyashita 1 Tokyo, Japan
Tatsunori Toyota 1 Chiyoda-ku, Japan
Ryuichi TOBA 1 Tokyo, Japan
Masahito Miyashita 1 Chiyoda-ku, Japan

Tatsunori Toyota 1 Tokyo, Japan
Ryuichi Toba 1 Chiyoda-ku, Japan

Recent patent applications by Dowa Electroncs Materials Co., Ltd.

Dowa Electroncs Materials Co., Ltd. based in Tokyo, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2011-10-20 ✅ Patent 8,736,025 granted on 2014-05-27

US20110254135A1

Electricity

III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity

AssigneeID:

479485 ⎘