Hsinchu
Taiwan
24
2025-12-25
23
2025-11-25
These are the the leading inventors for applications assigned to Attopsemi Technology Co., Ltd.:
Attopsemi Technology Co., Ltd. based in Hsinchu, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
POWER-ON-RESET CIRCUIT WITH IMPROVED RESPONSIVENESS
#2 | 2022-12-01 ✅ Patent 12,483,429 granted on 2025-11-25PHYSICALLY UNCLONABLE FUNCTION PRODUCED USING OTP MEMORY
#3 | 2022-07-28 ✅ Patent 12,002,527 granted on 2024-06-04Programmable resistance memory on wide-bandgap semiconductor technologies
#4 | 2021-11-04 ✅ Patent 11,615,859 granted on 2023-03-28One-time programmable memories with ultra-low power read operation and novel sensing scheme
#5 | 2020-11-05 ✅ Patent 11,062,786 granted on 2021-07-13One-time programmable memories with low power read operation and novel sensing scheme
#6 | 2020-07-09 ✅ Patent 10,916,317 granted on 2021-02-09Programmable resistance memory on thin film transistor technology
#7 | 2020-06-18 ✅ Patent 11,011,577 granted on 2021-05-18One-time programmable memory using gate-all-around structures
#8 | 2019-12-26 ✅ Patent 10,726,914 granted on 2020-07-28Programmable resistive memories with low power read operation and novel sensing scheme
#9 | 2019-06-20 ✅ Patent 10,923,204 granted on 2021-02-16Fully testible OTP memory
#10 | 2019-05-30 ✅ Patent 10,586,832 granted on 2020-03-10One-time programmable devices using gate-all-around structures
#11 | 2019-05-30 ✅ Patent 10,770,160 granted on 2020-09-08Programmable resistive memory formed by bit slices from a standard cell library
#12 | 2018-10-18 ✅ Patent 10,535,413 granted on 2020-01-14Low power read operation for programmable resistive memories
#13 | 2018-06-21 ✅ Patent 10,192,615 granted on 2019-01-29One-time programmable devices having a semiconductor fin structure with a divided active region
#14 | 2018-03-15 ✅ Patent 10,586,593 granted on 2020-03-10Programmable resistive device and memory using diode as selector
#15 | 2018-01-04 ✅ Patent 10,229,746 granted on 2019-03-12OTP memory with high data security
#16 | 2017-05-18 ✅ Patent 10,127,992 granted on 2018-11-13Method and structure for reliable electrical fuse programming
#17 | 2017-05-11 ✅ Patent 9,711,237 granted on 2017-07-18Method and structure for reliable electrical fuse programming
#18 | 2017-04-20 ✅ Patent 9,881,970 granted on 2018-01-30Programmable resistive devices using Finfet structures for selectors
#19 | 2017-03-02 ✅ Patent 9,754,679 granted on 2017-09-05One-time programmable memory devices using FinFET technology
#20 | 2016-03-10 ✅ Patent 9,496,033 granted on 2016-11-15Method and system of programmable resistive devices with read capability using a low supply voltage
#21 | 2015-10-15 ✅ Patent 9,478,306 granted on 2016-10-25Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
#22 | 2015-01-15 ✅ Patent 9,548,109 granted on 2017-01-17Circuit and system of using FinFET for building programmable resistive devices
#23 | 2015-01-01 ✅ Patent 10,249,379 granted on 2019-04-02One-time programmable devices having program selector for electrical fuses with extended area
#24 | 2012-06-14 ✅ Patent 9,496,265 granted on 2016-11-15Circuit and system of a high density anti-fuse
Also check out Attopsemi Technology Co., Ltd's (Hsinchu, Taiwan) applicant profile with 18 patent applications submitted.
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