Assignee profile:

UBIQ SEMICONDUCTOR CORP.

City:

Hsinchu County

Country:

Taiwan

Published Applications:

15

Last publication date:

2019-10-24

Patent Grants:

14

Last grant date:

2020-01-14

Top Inventors for applications by UBIQ SEMICONDUCTOR CORP.

These are the the leading inventors for applications assigned to UBIQ SEMICONDUCTOR CORP.:

Recent patent applications by UBIQ SEMICONDUCTOR CORP.

UBIQ SEMICONDUCTOR CORP. based in Hsinchu County, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2019-10-24 ✅ Patent 10,535,765 granted on 2020-01-14
US20190326430A1
Electricity

Power semiconductor device

#2 | 2019-08-29 ✅ Patent 10,418,442 granted on 2019-09-17
US20190267449A1
Electricity

Trench gate MOSFET

#3 | 2019-08-08
US20190245033A1
Electricity

POWER SEMICONDUCTOR DEVICE

#4 | 2019-08-08 ✅ Patent 10,438,941 granted on 2019-10-08
US20190244952A1
Electricity

Semiconductor apparatus

#5 | 2019-02-07 ✅ Patent 10,475,792 granted on 2019-11-12
US20190043859A1
Electricity

Power transistor device

#6 | 2018-12-13 ✅ Patent 10,269,945 granted on 2019-04-23
US20180358455A1
Electricity

Power transistor device

#7 | 2018-11-22 ✅ Patent 10,243,036 granted on 2019-03-26
US20180337229A1
Electricity

Semiconductor structure and manufacturing method thereof and terminal area structure of semiconductor device

#8 | 2018-04-19 ✅ Patent 9,954,355 granted on 2018-04-24
US20180109103A1
Electricity

Transient voltage suppressor apparatus

#9 | 2016-12-22 ✅ Patent 9,531,370 granted on 2016-12-27
US20160373105A1
Electricity

Transmitter, common mode transceiver using the same, and operating method thereof

#10 | 2016-09-29 ✅ Patent 9,773,770 granted on 2017-09-26
US20160284692A1
Electricity

Semiconductor device

#11 | 2016-06-23 ✅ Patent 9,741,708 granted on 2017-08-22
US20160181236A1
Electricity

Transient voltage suppressor and ESD protection device and array thereof

#12 | 2015-03-12 ✅ Patent 8,999,790 granted on 2015-04-07
US20150072493A1
Electricity

Method of forming a trench gate MOSFET having a thick bottom oxide

#13 | 2015-01-08 ✅ Patent 9,406,795 granted on 2016-08-02
US20150008514A1
Electricity

Trench gate MOSFET

#14 | 2014-01-16 ✅ Patent 8,927,369 granted on 2015-01-06
US20140017864A1
Electricity

Method of forming a trench gate MOSFET having a thick bottom oxide

#15 | 2014-01-16 ✅ Patent 9,035,283 granted on 2015-05-19
US20140015041A1
Electricity

Trench gate MOSFET

Also check out UBIQ Semiconductor Corp.'s (Hsinchu County, Taiwan) applicant profile with 14 patent applications submitted.

AssigneeID:

51754 ⎘