Assignee profile:

LEAP Semiconductor Corp.

City:

Taoyuan

Country:

Taiwan

Published Applications:

11

Last publication date:

2024-07-11

Patent Grants:

11

Last grant date:

2025-01-07

Top Inventors for applications by LEAP Semiconductor Corp.

These are the the leading inventors for applications assigned to LEAP Semiconductor Corp.:

Recent patent applications by LEAP Semiconductor Corp.

LEAP Semiconductor Corp. based in Taoyuan, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2024-07-11 ✅ Patent 12,191,403 granted on 2025-01-07
US20240234590A1
Electricity

Method of manufacturing merged PiN Schottky (MPS) diode

#2 | 2024-05-23 ✅ Patent 12,154,991 granted on 2024-11-26
US20240170583A1
Electricity

Method of manufacturing wide-band gap semiconductor device

#3 | 2024-04-04 ✅ Patent 12,095,254 granted on 2024-09-17
US20240113512A1
Electricity

Electronic device and temperature detection device thereof

#4 | 2024-03-28 ✅ Patent 12,442,695 granted on 2025-10-14
US20240102869A1
Physics

TEMPERATURE SENSING DEVICE

#5 | 2024-03-28 ✅ Patent 12,341,513 granted on 2025-06-24
US20240102868A1
Physics

DRIVING VOLTAGE GENERATING DEVICE

#6 | 2024-01-18 ✅ Patent 12,402,390 granted on 2025-08-26
US20240021478A1
Electricity

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR POWER DEVICE

#7 | 2024-01-04 ✅ Patent 12,068,742 granted on 2024-08-20
US20240007095A1
Electricity

Short-circuit protection circuitry

#8 | 2023-12-21 ✅ Patent 12,376,331 granted on 2025-07-29
US20230411515A1
Electricity

SEMICONDUCTOR POWER DEVICE AND METHOD OF MANUFACTURING THE SAME

#9 | 2023-10-12 ✅ Patent 12,166,082 granted on 2024-12-10
US20230326972A1
Electricity

Silicon carbide semiconductor power transistor and method of manufacturing the same

#10 | 2023-10-05 ✅ Patent 11,990,553 granted on 2024-05-21
US20230317861A1
Electricity

Merged PiN Schottky (MPS) diode and method of manufacturing the same

#11 | 2023-08-17 ✅ Patent 11,955,567 granted on 2024-04-09
US20230261119A1
Electricity

Wide-band gap semiconductor device and method of manufacturing the same

Also check out LEAP Semiconductor Corp.'s (Taoyuan, Taiwan) applicant profile with 11 patent applications submitted.

AssigneeID:

612370 ⎘