Los Gatos, California
United States
10
2015-08-20
9
2016-06-28
These are the the leading inventors for applications assigned to SEMI SOLUTIONS LLC:
SEMI SOLUTIONS LLC based in Los Gatos, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Reduced variation MOSFET using a drain-extension-last process
#2 | 2015-01-08 ✅ Patent 9,847,404 granted on 2017-12-19Fluctuation resistant FinFET
#3 | 2014-04-17Random Doping Fluctuation Resistant FinFET
#4 | 2010-06-03 ✅ Patent 8,048,732 granted on 2011-11-01Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor
#5 | 2009-08-20 ✅ Patent 7,863,689 granted on 2011-01-04Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor
#6 | 2009-08-13 ✅ Patent 8,207,784 granted on 2012-06-26Method and apparatus for MOSFET drain-source leakage reduction
#7 | 2009-07-09 ✅ Patent 8,247,840 granted on 2012-08-21Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
#8 | 2008-09-25 ✅ Patent 7,691,702 granted on 2010-04-06Method of manufacture of an apparatus for increasing stability of MOS memory cells
#9 | 2007-10-25 ✅ Patent 7,586,155 granted on 2009-09-08Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
#10 | 2006-07-13 ✅ Patent 7,651,905 granted on 2010-01-26Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts
Also check out Semi Solutions LLC's (Los Gatos, United States) applicant profile with 2 patent applications submitted.
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