CHANGXIN MEMORY TECHNOLOGIES, INC.

City:

Helei

Country:

China

Published Applications:

Last publication date:

2022-01-13

Patent Grants:

Last grant date:

2024-07-16

Top Inventors for applications by CHANGXIN MEMORY TECHNOLOGIES, INC.

These are the the leading inventors for applications assigned to CHANGXIN MEMORY TECHNOLOGIES, INC.:

Ming-Teng Hsieh 1 Anhui, China
Ming-Teng HSIEH 1 Hefei, China

Recent patent applications by CHANGXIN MEMORY TECHNOLOGIES, INC.

CHANGXIN MEMORY TECHNOLOGIES, INC. based in Helei, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2022-01-13 ✅ Patent 12,040,292 granted on 2024-07-16

US20220013479A1

Electricity

Method for forming conductive layer, and conductive structure and forming method therefor

AssigneeID:

620067 ⎘