CHANXIN MEMORY TECHNOLOGIES, INC.

City:

Hefei

Country:

China

Published Applications:

Last publication date:

2023-01-05

Patent Grants:

Last grant date:

2024-10-15

Top Inventors for applications by CHANXIN MEMORY TECHNOLOGIES, INC.

These are the the leading inventors for applications assigned to CHANXIN MEMORY TECHNOLOGIES, INC.:

SUNGSOO CHI 1 Hefei, China
Shuyan JIN 1 Hefei, China
Fengqin ZHANG 1 Hefei, China

Recent patent applications by CHANXIN MEMORY TECHNOLOGIES, INC.

CHANXIN MEMORY TECHNOLOGIES, INC. based in Hefei, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-01-05 ✅ Patent 12,119,047 granted on 2024-10-15

US20230005522A1

Physics

Readout circuit structure

AssigneeID:

627078 ⎘