Assignee profile:

Micron Technolgy, Inc.

City:

Boise, Idaho

Country:

United States

Published Applications:

16

Last publication date:

2024-07-18

Patent Grants:

16

Last grant date:

2025-07-08

Top Inventors for applications by Micron Technolgy, Inc.

These are the the leading inventors for applications assigned to Micron Technolgy, Inc.:

Recent patent applications by Micron Technolgy, Inc.

Micron Technolgy, Inc. based in Boise, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2024-07-18 ✅ Patent 12,353,771 granted on 2025-07-08
US20240241672A1
Physics

CHARGE LOSS MITIGATION THROUGHOUT MEMORY DEVICE LIFECYCLE BY PROACTIVE WINDOW SHIFT

#2 | 2024-05-30 ✅ Patent 12,299,318 granted on 2025-05-13
US20240176532A1
Physics

Data reordering at a memory subsystem

#3 | 2023-12-28 ✅ Patent 11,955,160 granted on 2024-04-09
US20230420030A1
Physics

Asynchronous signal to command timing calibration for testing accuracy

#4 | 2021-02-18 ✅ Patent 11,360,768 granted on 2022-06-14
US20210050040A1
Physics

Bit string operations in memory

#5 | 2020-11-19 ✅ Patent 10,818,363 granted on 2020-10-27
US20200365214A1
Physics

Apparatus and methods for calibrating sensing of memory cell data states

#6 | 2020-10-06 ✅ Patent 10,796,773 granted on 2020-10-06
US16411210
Physics

Memory devices including voltage generation systems

#7 | 2014-05-01 ✅ Patent 9,030,874 granted on 2015-05-12
US20140119121A1
Physics

Adjusting program and erase voltages in a memory device

#8 | 2012-04-19 ✅ Patent 8,466,016 granted on 2013-06-18
US20120094477A1
Electricity

Hafnium tantalum oxynitride dielectric

#9 | 2011-09-22 ✅ Patent 8,634,244 granted on 2014-01-21
US20110228607A1
Physics

Adjusting program and erase voltages in a memory device

#10 | 2007-05-17 ✅ Patent 7,479,440 granted on 2009-01-20
US20070111470A1
Electricity

Method of forming an isolation structure that includes forming a silicon layer at a base of the recess

#11 | 2006-01-19 ✅ Patent 7,161,174 granted on 2007-01-09
US20060011970A1
Electricity

Field-effect transistors having doped aluminum oxide dielectrics

#12 | 2006-01-12 ✅ Patent 7,583,534 granted on 2009-09-01
US20060008966A1
Physics

Memory utilizing oxide-conductor nanolaminates

#13 | 2006-01-05 ✅ Patent 7,528,463 granted on 2009-05-05
US20060001094A1
Electricity

Semiconductor on insulator structure

#14 | 2006-01-05 ✅ Patent 7,157,733 granted on 2007-01-02
US20060001082A1
Electricity

Floating-gate field-effect transistors having doped aluminum oxide dielectrics

#15 | 2005-12-22 ✅ Patent 7,130,239 granted on 2006-10-31
US20050281120A1
Physics

Memory system, method and predecoding circuit operable in different modes for selectively accessing multiple blocks of memory cells for simultaneous writing or erasure

#16 | 2005-06-07 ✅ Patent 6,904,552 granted on 2005-06-07
US9810366
-

Circuit and method for test and repair

Also check out Micron Technolgy, Inc.'s (Boise, United States) applicant profile with 10 patent applications submitted.

AssigneeID:

63137 ⎘