CANSEMI TECHNOLOGY INC.

City:

Guangzhou

Country:

China

Published Applications:

Last publication date:

2025-11-27

Patent Grants:

Last grant date:

2026-03-17

Top Inventors for applications by CANSEMI TECHNOLOGY INC.

These are the the leading inventors for applications assigned to CANSEMI TECHNOLOGY INC.:

Rilin Zhang 2 Guangzhou, China
Peixiong Gao 1 Guangzhou, China
Wenhu Liu 1 Guangzhou, China
Lei Shao 1 Guangzhou, China

Lei Shao 1 Guangdong, China
Peixiong Gao 1 Guangdong, China
Yohtz Julian CHANG 1 Guangzhou, China
Junjie Wang 1 Guangzhou, China

Wenhu Liu 1 Guangdong, China
Yunbo CHEN 1 Guangzhou, China
Rilin Zhang 1 Guangdong, China
Canyang HUANG 1 Guangzhou, China

Xiang LIU 1 Guangdong, China
Zeyong CHEN 1 Guangzhou, China
Yonghua Zhang 1 Guangzhou, China
Jiaxi WANG 1 Guangdong, China

Haiyan HUANG 1 Guangzhou, China
Junjie Wang 1 Guangdong, China
Yonghua Zhang 1 Guangdong, China

Recent patent applications by CANSEMI TECHNOLOGY INC.

CANSEMI TECHNOLOGY INC. based in Guangzhou, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2025-11-27 ✅ Patent 12,581,698 granted on 2026-03-17

US20250366081A1

Electricity

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF

#2 | 2025-09-11

US20250287638A1

Electricity

LDMOS DEVICE AND FABRICATION METHOD THEREOF

#3 | 2025-09-09 ✅ Patent 12,414,323 granted on 2025-09-09

US19190673

Electricity

LDMOS device and fabrication method thereof

#4 | 2025-08-07 ✅ Patent 12,431,394 granted on 2025-09-30

US20250253193A1

Electricity

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

#5 | 2024-11-14 ✅ Patent 12,317,523 granted on 2025-05-27

US20240379736A1

Electricity

Metal-insulator-metal capacitor structure and preparation method therefor

#6 | 2024-10-03 ✅ Patent 12,432,944 granted on 2025-09-30

US20240332395A1

Electricity

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING SAME

AssigneeID:

644440 ⎘