CHANGXIN MEMORY TECHNOLOGY, INC.

City:

Hefei

Country:

China

Published Applications:

Last publication date:

2023-11-09

Patent Grants:

Last grant date:

2025-07-29

Top Inventors for applications by CHANGXIN MEMORY TECHNOLOGY, INC.

These are the the leading inventors for applications assigned to CHANGXIN MEMORY TECHNOLOGY, INC.:

Chuangming HOU 1 Hefei, China
Xiang LIU 1 Hefei City, China
KeJun MU 1 Hefei City, China
Xiang LIU 1 Hefei, China

Kejun MU 1 Hefei, China

Recent patent applications by CHANGXIN MEMORY TECHNOLOGY, INC.

CHANGXIN MEMORY TECHNOLOGY, INC. based in Hefei, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-11-09 ✅ Patent 12,376,293 granted on 2025-07-29

US20230363152A1

Electricity

ANTI-FUSE ARRAY STRUCTURE, OPERATION METHOD THEREOF AND MEMORY

#2 | 2023-03-02 ✅ Patent 12,324,140 granted on 2025-06-03

US20230068654A1

Electricity

Semiconductor structure and manufacturing method thereof

#3 | 2023-01-19 ✅ Patent 12,538,769 granted on 2026-01-27

US20230018338A1

Electricity

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

AssigneeID:

644970 ⎘