Addison, Texas
United States
12
2018-09-13
11
2020-03-03
These are the the leading inventors for applications assigned to D3 Semiconductor LLC:
D3 Semiconductor LLC based in Addison, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Super junction MOS bipolar transistor having drain gaps
#2 | 2018-01-11 ✅ Patent 10,074,735 granted on 2018-09-11Surface devices within a vertical power device
#3 | 2017-06-22 ✅ Patent 9,997,455 granted on 2018-06-12Device architecture and method for precision enhancement of vertical semiconductor devices
#4 | 2017-04-06 ✅ Patent 9,806,186 granted on 2017-10-31Termination region architecture for vertical power transistors
#5 | 2017-04-06 ✅ Patent 9,837,358 granted on 2017-12-05Source-gate region architecture in a vertical power semiconductor device
#6 | 2017-03-02 ✅ Patent 9,865,727 granted on 2018-01-09Device architecture and method for improved packing of vertical field effect devices
#7 | 2016-09-01 ✅ Patent 9,755,058 granted on 2017-09-05Surface devices within a vertical power device
#8 | 2015-11-26 ✅ Patent 9,496,386 granted on 2016-11-15Device architecture and method for improved packing of vertical field effect devices
#9 | 2015-11-26 ✅ Patent 9,589,889 granted on 2017-03-07Device architecture and method for precision enhancement of vertical semiconductor devices
#10 | 2014-09-18DEVICE ARCHITECTURE AND METHOD FOR TEMPERATURE COMPENSATION OF VERTICAL FIELD EFFECT DEVICES
#11 | 2014-05-29 ✅ Patent 9,117,899 granted on 2015-08-25Device architecture and method for improved packing of vertical field effect devices
#12 | 2014-05-29 ✅ Patent 9,117,709 granted on 2015-08-25Device architecture and method for precision enhancement of vertical semiconductor devices
Also check out D3 Semiconductor LLC's (Addison, United States) applicant profile with 12 patent applications submitted.
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