Saratoga, California
United States
32
2016-11-17
19
2017-08-22
These are the the leading inventors for applications assigned to T3MEMORY, INC.:
T3MEMORY, INC. based in Saratoga, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Method of making a spin-transfer-torque magnetoresistive random access memory (STT-MRAM)
#2 | 2016-10-06 ✅ Patent 11,114,611 granted on 2021-09-07Method to make MRAM with small footprint
#3 | 2016-09-08NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS
#4 | 2016-08-04 ✅ Patent 11,257,862 granted on 2022-02-22MRAM having spin hall effect writing and method of making the same
#5 | 2016-03-10METHOD TO MAKE MRAM WITH SMALL CELL SIZE
#6 | 2016-03-03THREE-TERMINAL STT-MRAM AND METHOD TO MAKE THE SAME
#7 | 2016-03-03METHOD TO MAKE THREE-TERMINAL MRAM
#8 | 2015-12-17THREE-TERMINAL SPIN TRANSISTOR MAGNETIC RANDOM ACCESS MEMORY AND THE METHOD TO MAKE THE SAME
#9 | 2015-11-26METHOD TO FORM SMALL MRAM CELL BY COLLIMATED OXYGEN ION IMPLANTATION
#10 | 2015-05-21METHOD TO FORM MRAM BY DUAL ION IMPLANTATION
#11 | 2014-11-20METHOD TO MAKE MRAM USING OXYGEN ION IMPLANTATION
#12 | 2014-11-06 ✅ Patent 11,271,034 granted on 2022-03-08Method of manufacturing magnetic memory devices
#13 | 2014-11-06 ✅ Patent 9,024,399 granted on 2015-05-05Perpendicular STT-MRAM having logical magnetic shielding
#14 | 2014-10-30PERPENDICULAR STT-MRAM HAVING PERMEABLE DIELECTRIC LAYERS
#15 | 2014-10-23 ✅ Patent 8,963,222 granted on 2015-02-24Spin hall effect magnetic-RAM
#16 | 2014-10-16 ✅ Patent 9,054,301 granted on 2015-06-09Method of making an integrated device using oxygen ion implantation
#17 | 2014-10-09 ✅ Patent 10,783,943 granted on 2020-09-22MRAM having novel self-referenced read method
#18 | 2014-10-09 ✅ Patent 9,006,849 granted on 2015-04-14Hybrid method of patterning MTJ stack
#19 | 2014-10-02METHOD OF PATTERNING MTJ STACK
#20 | 2014-09-11 ✅ Patent 9,099,188 granted on 2015-08-04Magnetoresistive element
#21 | 2014-09-11MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME
#22 | 2014-09-04MAGNETORESISTIVE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME
#23 | 2014-08-28 ✅ Patent 9,087,983 granted on 2015-07-21Self-aligned process for fabricating voltage-gated MRAM
#24 | 2014-08-07 ✅ Patent 9,257,637 granted on 2016-02-09Method of manufacturing MRAM memory elements
#25 | 2014-08-07 ✅ Patent 9,287,323 granted on 2016-03-15Perpendicular magnetoresistive elements
#26 | 2014-08-07 ✅ Patent 9,461,243 granted on 2016-10-04STT-MRAM and method of manufacturing the same
#27 | 2014-07-31 ✅ Patent 10,953,319 granted on 2021-03-23Spin transfer MRAM element having a voltage bias control
#28 | 2014-07-24PERPENDICULAR MAGNETORESISTIVE MEMORY ELEMENT
#29 | 2014-07-24 ✅ Patent 10,608,170 granted on 2020-03-31Electric field assisted perpendicular STT-MRAM
#30 | 2014-07-17 ✅ Patent 9,275,713 granted on 2016-03-01Magnetoresistive element and method of manufacturing the same
#31 | 2014-06-26 ✅ Patent 10,522,589 granted on 2019-12-31Method of making a magnetoresistive element
#32 | 2014-06-26 ✅ Patent 10,672,977 granted on 2020-06-02Perpendicular magnetoresistive elements
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