INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.

City:

Suzhou, Jiangsu

Country:

China

Published Applications:

Last publication date:

2026-04-16

Patent Grants:

Last grant date:

Top Inventors for applications by INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.

These are the the leading inventors for applications assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.:

Jheng-Sheng YOU 2 Suzhou, Jiangsu, China
King Yuen WONG 2 Suzhou, Jiangsu, China
Jinhan ZHANG 1 Suzhou, Jiangsu, China
Yuanyu WU 1 Suzhou, Jiangsu, China

Jian RAO 1 Suzhou, Jiangsu, China
Kai HU 1 Suzhou, Jiangsu, China
Yulong ZHANG 1 Suzhou, Jiangsu, China
Peng-Yi WU 1 Suzhou, Jiangsu, China

Xiaoyan ZHANG 1 Suzhou, Jiangsu, China
Haibo GUO 1 Suzhou, Jiangsu, China
Huixin HE 1 Suzhou, Jiangsu, China
Ziming DU 1 Suzhou, Jiangsu, China

Junhui MA 1 Suzhou, Jiangsu, China
Yang LIU 1 Suzhou, Jiangsu, China
Chuan Gang LI 1 Suzhou, Jiangsu, China
Ronghui HAO 1 Suzhou, Jiangsu, China

Zhongyu ZHANG 1 Suzhou, Jiangsu, China

Recent patent applications by INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.

INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD. based in Suzhou, Jiangsu, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2026-04-16

US20260107492A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#2 | 2026-04-02

US20260096127A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

#3 | 2026-03-26

US20260090062A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

#4 | 2026-03-26

US20260090001A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

#5 | 2026-02-19

US20260052719A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#6 | 2025-11-20

US20250359269A1

Electricity

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

AssigneeID:

712488 ⎘