San Jose, California
United States
63
2025-11-13
50
2024-08-06
These are the the leading inventors for applications assigned to MAXPOWER SEMICONDUCTOR INC.:
MAXPOWER SEMICONDUCTOR INC. based in San Jose, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
HETEROJUNCTION SEMICONDUCTOR POWER DEVICES USING DIFFERENT BANDGAP SEMICONDUCTORS
#2 | 2025-07-24SELF-ALIGNED SOURCE CONTACT FOR SIC SWITCH UTILIZING OXIDATION RATE DIFFERENCE BETWEEN POLY-SI AND SIC
#3 | 2024-11-14VERTICAL MOSFET USING A SILICON CARBIDE LAYER AND A SILICON LAYER FOR IMPROVED PERFORMANCE
#4 | 2024-10-17MOSFET WITH DISTRIBUTED DOPED P-SHIELD ZONES UNDER TRENCHES HAVING DIFFERENT DEPTHS
#5 | 2024-10-10VERTICAL MOSFET WITH HIGH SHORT CIRCUIT WITHSTAND TIME CAPABILITY
#6 | 2022-02-17 ✅ Patent 12,057,482 granted on 2024-08-06MOSFET with distributed doped P-shield zones under trenches
#7 | 2021-06-10 ✅ Patent 11,888,047 granted on 2024-01-30Lateral transistors and methods with low-voltage-drop shunt to body diode
#8 | 2021-03-18 ✅ Patent 11,316,021 granted on 2022-04-26High density power device with selectively shielded recessed field plate
#9 | 2020-09-03Lateral Semiconductor Power Devices
#10 | 2020-08-27 ✅ Patent 11,289,596 granted on 2022-03-29Split gate power device and its method of fabrication
#11 | 2020-03-26Power Semiconductor Devices, Methods, and Structures with Embedded Dielectric Layers Containing Permanent Charges
#12 | 2020-01-02 ✅ Patent 10,529,810 granted on 2020-01-07Lateral semiconductor power devices
#13 | 2019-04-25Semiconductor on Insulator Devices Containing Permanent Charge
#14 | 2019-04-25Self-Aligned Shielded Trench MOSFETs and Related Fabrication Methods
#15 | 2019-04-18MOS-Gated Power Devices, Methods, and Integrated Circuits
#16 | 2019-03-28 ✅ Patent 10,720,511 granted on 2020-07-21Trench transistors and methods with low-voltage-drop shunt to body diode
#17 | 2019-02-28 ✅ Patent 10,593,813 granted on 2020-03-17Vertical rectifier with added intermediate region
#18 | 2019-02-14Semiconductor Device
#19 | 2018-12-20 ✅ Patent 12,284,817 granted on 2025-04-22Trench-gated heterostructure and double-heterostructure active devices
#20 | 2018-12-13Fabrication of Trench-Gated Wide-Bandgap Devices
#21 | 2018-11-22 ✅ Patent 10,325,980 granted on 2019-06-18Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#22 | 2018-11-08 ✅ Patent 10,720,510 granted on 2020-07-21Lateral transistors and methods with low-voltage-drop shunt to body diode
#23 | 2018-09-13 ✅ Patent 10,157,983 granted on 2018-12-18Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands
#24 | 2018-05-17 ✅ Patent 10,128,353 granted on 2018-11-13Trench transistors and methods with low-voltage-drop shunt to body diode
#25 | 2017-12-21 ✅ Patent 10,510,863 granted on 2019-12-17Power device having a polysilicon-filled trench with a tapered oxide thickness
#26 | 2017-12-07 ✅ Patent 10,014,365 granted on 2018-07-03Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#27 | 2017-11-16 ✅ Patent 9,947,779 granted on 2018-04-17Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltage
#28 | 2017-08-31 ✅ Patent 9,941,351 granted on 2018-04-10Vertical power transistor with deep trenches and deep regions surrounding cell array
#29 | 2017-08-31 ✅ Patent 9,978,831 granted on 2018-05-22Vertical power transistor with termination area having doped trenches with variable pitches
#30 | 2017-08-31 ✅ Patent 10,396,150 granted on 2019-08-27Vertical power transistor die with etched beveled edges for increasing breakdown voltage
#31 | 2017-08-24 ✅ Patent 9,852,910 granted on 2017-12-26Vertical power transistor with dual buffer regions
#32 | 2017-08-24 ✅ Patent 9,805,933 granted on 2017-10-31Vertical power transistor with deep floating termination regions
#33 | 2017-04-20 ✅ Patent 9,825,128 granted on 2017-11-21Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings
#34 | 2017-03-16 ✅ Patent 10,186,573 granted on 2019-01-22Lateral power MOSFET with non-horizontal RESURF structure
#35 | 2017-03-09 ✅ Patent 9,812,548 granted on 2017-11-07Power device having a polysilicon-filled trench with a tapered oxide thickness
#36 | 2017-03-02 ✅ Patent 9,716,152 granted on 2017-07-25Semiconductor device with electric field relaxation portion in insulating layer between lower and upper trench electrodes
#37 | 2016-12-15 ✅ Patent 9,923,556 granted on 2018-03-20Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
#38 | 2016-11-24 ✅ Patent 9,847,413 granted on 2017-12-19Devices, components and methods combining trench field plates with immobile electrostatic charge
#39 | 2016-10-06 ✅ Patent 9,842,917 granted on 2017-12-12Methods of operating power semiconductor devices and structures
#40 | 2016-06-16 ✅ Patent 9,419,085 granted on 2016-08-16Lateral devices containing permanent charge
#41 | 2016-03-03 ✅ Patent 9,419,084 granted on 2016-08-16Devices, components and methods combining trench field plates with immobile electrostatic charge
#42 | 2016-01-28 ✅ Patent 9,461,127 granted on 2016-10-04Vertical power MOSFET having planar channel and its method of fabrication
#43 | 2015-11-26 ✅ Patent 9,997,614 granted on 2018-06-12Lateral transistors and methods with low-voltage-drop shunt to body diode
#44 | 2015-10-15 ✅ Patent 9,196,724 granted on 2015-11-24Lateral devices containing permanent charge
#45 | 2015-09-24METHOD OF MANUFACTURE FOR A SEMICONDUCTOR DEVICE
#46 | 2015-08-06 ✅ Patent 9,093,522 granted on 2015-07-28Vertical power MOSFET with planar channel and vertical field plate
#47 | 2015-08-06 ✅ Patent 9,184,248 granted on 2015-11-10Vertical power MOSFET having planar channel and its method of fabrication
#48 | 2015-07-30 ✅ Patent 10,014,404 granted on 2018-07-03MOS-gated power devices, methods, and integrated circuits
#49 | 2015-07-30 ✅ Patent 9,859,400 granted on 2018-01-02Trench transistors and methods with low-voltage-drop shunt to body diode
#50 | 2015-04-23 ✅ Patent 9,263,573 granted on 2016-02-16Power semiconductor devices, structures, and related methods
#51 | 2014-09-11 ✅ Patent 9,076,861 granted on 2015-07-07Schottky and MOSFET+Schottky structures, devices, and methods
#52 | 2014-08-28 ✅ Patent 8,946,769 granted on 2015-02-03Lateral devices containing permanent charge
#53 | 2014-08-28 ✅ Patent 9,224,855 granted on 2015-12-29Trench gated power device with multiple trench width and its fabrication process
#54 | 2014-07-24 ✅ Patent 9,590,075 granted on 2017-03-07Semiconductor device
#55 | 2014-07-17 ✅ Patent 8,962,426 granted on 2015-02-24Method of manufacture for a semiconductor device
#56 | 2014-05-01 ✅ Patent 8,957,473 granted on 2015-02-17MOS-gated power devices, methods, and integrated circuits
#57 | 2014-03-13 ✅ Patent 8,907,412 granted on 2014-12-09Semiconductor device
#58 | 2014-02-27 ✅ Patent 8,847,307 granted on 2014-09-30Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges
#59 | 2014-02-27 ✅ Patent 9,129,936 granted on 2015-09-08Devices, components and methods combining trench field plates with immobile electrostatic charge
#60 | 2014-02-27 ✅ Patent 8,890,238 granted on 2014-11-18Power semiconductor devices, structures, and related methods
#61 | 2014-02-13 ✅ Patent 9,024,379 granted on 2015-05-05Trench transistors and methods with low-voltage-drop shunt to body diode
#62 | 2014-02-13 ✅ Patent 9,048,118 granted on 2015-06-02Lateral transistors with low-voltage-drop shunt to body diode
#63 | 2010-02-04 ✅ Patent 10,062,788 granted on 2018-08-28Semiconductor on insulator devices containing permanent charge
Also check out MaxPower Semiconductor Inc.'s (San Jose, United States) applicant profile with 41 patent applications submitted.
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