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Assignee profile:

TEKCORE CO., LTD.

City:

Nantou

Country:

Taiwan

Published Applications:

20

Last publication date:

2018-04-05

Patent Grants:

17

Last grant date:

2018-06-12

Top Inventors for applications by TEKCORE CO., LTD.

These are the the leading inventors for applications assigned to TEKCORE CO., LTD.:

Recent patent applications by TEKCORE CO., LTD.

TEKCORE CO., LTD. based in Nantou, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2018-04-05 ✅ Patent 9,997,672 granted on 2018-06-12
US20180097148A1
Electricity

Electrode structure of light emitting diode

 #2 | 2016-03-24 ✅ Patent 9,478,711 granted on 2016-10-25
US20160087157A1
Electricity

Transparent conductive layer structure of light emitting diode

 #3 | 2015-05-07
US20150123160A1
Electricity

FLIP CHIP LIGHT-EMITTING DIODE PACKAGE STRUCTURE

 #4 | 2014-03-25 ✅ Patent 8,679,881 granted on 2014-03-25
US13934846
-

Growth method for reducing defect density of gallium nitride

 #5 | 2012-04-12
US20120088318A1
Electricity

Method for Fabricating a Vertical Light-Emitting Diode with High Brightness

 #6 | 2011-07-07 ✅ Patent 8,378,376 granted on 2013-02-19
US20110163293A1
Electricity

Vertical light-emitting diode

 #7 | 2011-05-26 ✅ Patent 7,977,254 granted on 2011-07-12
US20110124203A1
Electricity

Method of forming a gate insulator in group III-V nitride semiconductor devices

 #8 | 2011-04-28 ✅ Patent 7,981,705 granted on 2011-07-19
US20110097831A1
Electricity

Method of manufacturing a vertical type light-emitting diode

 #9 | 2011-01-13
US20110006307A1
Electricity

Group III-Nitride Semiconductor Schottky Diode and Its Fabrication Method

 #10 | 2009-12-03 ✅ Patent 7,799,593 granted on 2010-09-21
US20090298213A1
Electricity

Light emitting diode structure and method for fabricating the same

 #11 | 2009-07-23 ✅ Patent 7,901,963 granted on 2011-03-08
US20090186435A1
Electricity

Surface roughening method for light emitting diode substrate

 #12 | 2009-06-25 ✅ Patent 7,579,202 granted on 2009-08-25
US20090162959A1
Electricity

Method for fabricating light emitting diode element

 #13 | 2009-06-25 ✅ Patent 7,713,769 granted on 2010-05-11
US20090159910A1
Electricity

Method for fabricating light emitting diode structure having irregular serrations

 #14 | 2009-06-25 ✅ Patent 7,598,105 granted on 2009-10-06
US20090159871A1
Electricity

Light emitting diode structure and method for fabricating the same

 #15 | 2009-06-25 ✅ Patent 8,101,447 granted on 2012-01-24
US20090159870A1
Electricity

Light emitting diode element and method for fabricating the same

 #16 | 2009-04-30 ✅ Patent 7,645,624 granted on 2010-01-12
US20090111202A1
Electricity

Method for self bonding epitaxy

 #17 | 2006-08-24 ✅ Patent 7,462,505 granted on 2008-12-09
US20060189019A1
Chemistry; metallurgy

Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound

 #18 | 2006-06-08 ✅ Patent 7,253,061 granted on 2007-08-07
US20060121700A1
Electricity

Method of forming a gate insulator in group III-V nitride semiconductor devices

 #19 | 2006-01-19 ✅ Patent 7,022,597 granted on 2006-04-04
US20060014368A1
Electricity

Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes

 #20 | 2005-04-19 ✅ Patent 6,881,602 granted on 2005-04-19
US10410989
-

Gallium nitride-based semiconductor light emitting device and method

Also check out TEKCORE CO., LTD.'s (Nantou, Taiwan) applicant profile with 3 patent applications submitted.

AssigneeID:

91941 ⎘