Layered group III-V compound including additive elements and having ferroelectric-like properties, and nanosheet using the same

Layered group III-V compound and nanosheet containing arsenic, and electrical device using the same

Layered GaAs, method of preparing same, and GaAs nanosheet exfoliated from same

Optical thin film for meta-surface and meta-optical device including the same

Chalcogenide material and electronic device including the same

Chalcogenide material and electronic device including the same

High-throughput method to predict bulk properties of inorganic materials

Method and apparatus for producing crystalline cladding and crystalline core optical fibers

Compositions containing arsenic and their use in methods of treatment

Thermoelectric materials, thermoelectric module including thermoelectric materials, and thermoelectric apparatus including thermoelectric modules

Hafnium telluride layered compounds, transparent and electrically conductive film, and electronic devices including the same

Synthesis of Chalcogenide Ternary and Quaternary Nanotubes Through Directed Compositional Alterations of Bacterial As-S Nanotubes

Thermoelectric materials, thermoelectric module including thermoelectric materials, and thermoelectric apparatus including thermoelectric modules