ClassID:

119993

C23C14/0026 - CPC Classification

Classification description:

Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material; Reactive sputtering or evaporation Activation or excitation of reactive gases outside the coating chamber

Sub-classes:
Recent Application in this class:
#1
20180144935
2018-05-24

Method for formation of a transition metal dichalcogenide (TMDC) material layer

#2
20170330796
2017-11-16

Filling a cavity in a substrate using sputtering and deposition

#3
20160225939
2016-08-04

In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma

#4
20160225927
2016-08-04

In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-selenide by nitrogen plasma

#5
20160181068
2016-06-23

Radical generator and molecular beam epitaxy apparatus

#6
20140199800
2014-07-17

Luminescent materials that emit light in the visible range or the near infrared range and methods of forming thereof

#7
20130129937
2013-05-23

Vapor Deposition of Ceramic Coatings

#8
20110180757
2011-07-28

LUMINESCENT MATERIALS THAT EMIT LIGHT IN THE VISIBLE RANGE OR THE NEAR INFRARED RANGE AND METHODS OF FORMING THEREOF

#9
20110045245
2011-02-24

Oxide coated cutting insert

#10
20110044775
2011-02-24

Oxide coated cutting insert

#11
20100163931
2010-07-01

GROUP III-V NITRIDE LAYER AND METHOD FOR PRODUCING THE SAME

#12
20100136770
2010-06-03

Group-III metal nitride and preparation thereof

#13
20090068821
2009-03-12

Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate

#14
20080072962
2008-03-27

Method and apparatus for producing semiconductor films and related devices

#15
20070114207
2007-05-24

Charge-free method of forming nanostructures on a substrate

#16
20070114124
2007-05-24

Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate

#17
20070042216
2007-02-22

Method and apparatus for manufacturing a zinc oxide thin film at low temperatures

#18
20070042127
2007-02-22

Film growth at low pressure mediated by liquid flux and induced by activated oxygen

#19
20060233969
2006-10-19

Hybrid beam deposition system and methods for fabricating metal oxide-ZnO films, p-type ZnO films, and ZnO-based II-VI compound semiconductor devices

#20
20060163527
2006-07-27

Sp3 bond boron nitride emitting light in ultraviolet region, its producing method, and functional material using same

#21
20060003602
2006-01-05

Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof