ClassID:

120163

C23C16/301 - CPC Classification

Classification description:

Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material; Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Sub-classes:
Recent Application in this class:
#1
20250019823
2025-01-16

METHOD AND DEVICE FOR DEPOSITING A LAYER CONTAINING A GROUP FIVE ELEMENT IN A PROCESS CHAMBER AND SUBSEQUENT CLEANING OF THE PROCESS CHAMBER

#2
20240327980
2024-10-03

METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR GROWTH DEVICE

#3
20240263310
2024-08-08

GAS-INLET ELEMENT FOR A CVD REACTOR

#4
20240141552
2024-05-02

SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

#5
20240105450
2024-03-28

GROUP III-V SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION OF SAME INCLUDING IN-SITU SURFACE PASSIVATION

#6
20220074057
2022-03-10

SYSTEMS AND METHODS FOR LARGE SCALE GAS GENERATION

#7
20210237169
2021-08-05

Cutting tool including substrate and coating layer

#8
20210193464
2021-06-24

Vapor phase epitaxy method

#9
20210193463
2021-06-24

VAPOR PHASE EPITAXY METHOD

#10
20210167291
2021-06-03

Vapor jet printing

#11
20210143297
2021-05-13

HYDRIDE ENHANCED GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY

#12
20210130979
2021-05-06

Concentric flow reactor

#13
20210026248
2021-01-28

Display device having integrated metamaterial lens

#14
20200243709
2020-07-30

METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP

#15
20200032416
2020-01-30

Concentric flow reactor

#16
20190384181
2019-12-19

Display device having integrated metamaterial lens

#17
20190305224
2019-10-03

Vapor jet printing

#18
20190221705
2019-07-18

Hydride enhanced growth rates in hydride vapor phase epitaxy

#19
20190169767
2019-06-06

Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

#20
20190056532
2019-02-21

MWIR/LWIR transparent, conductive coatings

#21
20180334744
2018-11-22

EVAPORATION VESSEL APPARATUS AND METHOD

#22
20180224268
2018-08-09

Vapor phase growth rate measuring apparatus, vapor phase growth apparatus, and growth rate detection method

#23
20180172988
2018-06-21

Display device having integrated metamaterial lens

#24
20180073162
2018-03-15

DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES

#25
20170243740
2017-08-24

Use of at least one binary group 15 element compound, a 13/15 semiconductor layer and binary group 15 element compounds

#26
20170198409
2017-07-13

Concentric flower reactor

#27
20160322509
2016-11-03

Gallium arsenide based materials used in thin film transistor applications

#28
20160265113
2016-09-15

Evaporation vessel apparatus and method

#29
20160204008
2016-07-14

Substrate treatment device

#30
20150228548
2015-08-13

Nano deposition and ablation for the repair and fabrication of integrated circuits

#31
20150129771
2015-05-14

Method for preparing bismuth iodide article and method for manufacturing radiation detecting element

#32
20150079766
2015-03-19

Optimized method for fabricating patterns of III-V semiconductor material on a semiconductor substrate

#33
20150007771
2015-01-08

Gas inlet member of a CVD reactor

#34
20140287141
2014-09-25

Process for preparing trialkyl compounds of metals of group IIIA

#35
20140256974
2014-09-11

Process for preparing trialkylgallium compounds

#36
20140045289
2014-02-13

Method for manufacturing nitride semiconductor layer and method for manufacturing semiconductor light emitting device

#37
20130337636
2013-12-19

CARBON DOPING OF GALLIUM ARSENIDE VIA HYDRIDE VAPOR PHASE EPITAXY

#38
20130052333
2013-02-28

DEPOSITION SYSTEMS HAVING REACTION CHAMBERS CONFIGURED FOR IN-SITU METROLOGY AND RELATED METHODS

#39
20130047918
2013-02-28

DEPOSITION SYSTEMS INCLUDING A PRECURSOR GAS FURNACE WITHIN A REACTION CHAMBER, AND RELATED METHODS

#40
20120309124
2012-12-06

Method for producing a group III nitride semiconductor light-emitting device

#41
20120299061
2012-11-29

Method for manufacturing epitaxial crystal substrate, epitaxial crystal substrate and semiconductor device

#42
20120270384
2012-10-25

APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE

#43
20120225564
2012-09-06

VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

#44
20120156863
2012-06-21

SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS

#45
20120118233
2012-05-17

Systems for forming semiconductor materials by atomic layer deposition

#46
20120083101
2012-04-05

Systems and methods for forming semiconductor materials by atomic layer deposition

#47
20120083100
2012-04-05

Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods

#48
20120080753
2012-04-05

GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLICATIONS

#49
20120080092
2012-04-05

High efficiency thin film transistor device with gallium arsenide layer

#50
20120040515
2012-02-16

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

#51
20120040514
2012-02-16

Chemical vapor deposition with elevated temperature gas injection

#52
20110268880
2011-11-03

Reactor clean

#53
20110244663
2011-10-06

FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER

#54
20110244617
2011-10-06

FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER

#55
20110227037
2011-09-22

Enhancement of LED light extraction with in-situ surface roughening

#56
20110212546
2011-09-01

UV absorption based monitor and control of chloride gas stream

#57
20110186984
2011-08-04

Substrate processing apparatus and method of manufacturing semiconductor device

#58
20110155061
2011-06-30

REACTOR, CHEMICAL VAPOR DEPOSITION REACTOR, AND METALORGANIC CHEMICAL VAPOR DEPOSITION REACTOR

#59
20110081771
2011-04-07

MULTICHAMBER SPLIT PROCESSES FOR LED MANUFACTURING

#60
20100307418
2010-12-09

VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR

#61
20100285206
2010-11-11

Method and apparatus

#62
20100273318
2010-10-28

Substrate pretreatment for subsequent high temperature group III depositions

#63
20100112216
2010-05-06

Chemical vapor deposition with elevated temperature gas injection

#64
20100098885
2010-04-22

PLASMA SILANIZATION SUPPORT METHOD AND SYSTEM

#65
20100092668
2010-04-15

Concentric showerhead for vapor deposition

#66
20100018463
2010-01-28

Plural Gas Distribution System

#67
20090286342
2009-11-19

Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system

#68
20090117675
2009-05-07

Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device

#69
20090117272
2009-05-07

Layer depositing device and method for operating it

#70
20080187768
2008-08-07

GeSiSn-based compounds, templates, and semiconductor structures

#71
20080131979
2008-06-05

Vapor-Phase Growth System and Vapor-Phase Growth Method

#72
20080124453
2008-05-29

IN-SITU DETECTION OF GAS-PHASE PARTICLE FORMATION IN NITRIDE FILM DEPOSITION

#73
20070281481
2007-12-06

Controlled growth of gallium nitride nanostructures

#74
20070128359
2007-06-07

PRODUCTION APPARATUS FOR PRODUCING GALLIUM NITRIDE FILM SEMICONDUCTOR AND CLEANING APPARATUS FOR EXHAUST GAS

#75
20070047899
2007-03-01

Methods of fabricating nanoclusters and dielectric layer having the same

#76
20070031991
2007-02-08

Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition

#77
20060228819
2006-10-12

Method of making nitride-based compound semiconductor crystal and substrate

#78
20060115595
2006-06-01

Organometallic compounds

#79
20060047132
2006-03-02

Method for making organometallic compounds

#80
20060030163
2006-02-09

Methods, complexes, and system for forming metal-containing films

#81
20050176249
2005-08-11

Controlled growth of gallium nitride nanostructures

#82
20050163928
2005-07-28

Production apparatus for producing gallium nitride semiconductor film and cleaning apparatus for exhaust gas

#83
14597566
2017-09-12

Inverted metamorphic multijunction solar cell with lightweight laminate substrate