171125 ⎘
Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
FET BASED SENSORY SYSTEMS
#2FET based sensory systems
#3Vibration sensor
#4Micromechanical sensor apparatus having a movable gate and corresponding production method
#5Analysis circuit for field effect transistors having a displaceable gate structure
#6Packaging system and process for inertial sensor modules using moving-gate transducers
#7Microelectronic component and corresponding production process
#8Sensor device and method
#9Inertial sensor having a field effect transistor
#10Sensor and method of manufacturing the same
#11Device sensitive to a movement comprising at least one transistor
#12Method for MEMS threshold sensor packaging
#13Micro electro mechanical device, method for manufacturing the same, semiconductor device, and method for manufacturing the same
#14Sensor having switch function, manufacturing method thereof and electronic device having sensor built therein
#15Piezo-TFT cantilever MEMS fabrication
#16MOS transistor with a deformable gate
#17Piezo-TFT cantilever MEMS