177184 ⎘
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor; Exposure apparatus for microlithography; Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning Multiple exposures, e.g. combination of fine and coarse exposures, double patterning, multiple exposures for printing a single feature, mix-and-match
High resolution lithography system and method
#602Photolithography using interdependent binary masks
#603Method of forming an isolated line pattern using photolithography
#604Method of exposing a wafer to a light, and reticle, reticle assembly and exposing apparatus for performing the same
#605Exposing mask and production method therefor and exposing method
#606Defect mitigation in spatial light modulator used for dynamic photolithography
#607Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography
#608Method for exposing photoresist film of semiconductor device
#609Method involving a mask or a reticle
#610Method for carrying out a double or multiple exposure
#611Reticle, exposure monitoring method, exposure method and manufacturing method for semiconductor device
#612Orientation dependent shielding for use with dipole illumination techniques
#613Photolithography method for reducing effects of lens aberration
#614Method for forming pattern
#615Multiple exposure method
#616Lithography mask for imaging of convex structures
#617Illuminator controlled tone reversal printing
#618Composite optical lithography method for patterning lines of unequal width
#619Multiple exposure technique to pattern tight contact geometries
#620Method for imaging a semiconductor wafer
#621METHODS AND SYSTEMS TO COMPENSATE FOR A STITCHING DISTURBANCE OF A PRINTED PATTERN IN A MASKLESS LITHOGRAPHY SYSTEM UTILIZING OVERLAP OF EXPOSURE ZONES WITH ATTENUATION OF THE AERIAL IMAGE IN THE OVERLAP REGION
#622Frequency division multiplexing (FDM) lithography
#623Multiple exposure method for forming patterned photoresist layer
#624Method of manufacturing a semiconductor device
#625Method and apparatus for personalization of semiconductor
#626Maskless lithography systems and methods utilizing spatial light modulator arrays
#627Multiple mask step and scan aligner
#628Continuous direct-write optical lithography
#629Lithographic apparatus, device manufacturing method, and device manufactured thereby
#630Scanning exposure technique
#631Multiple exposure method for forming a patterned photoresist layer
#632Design and layout of phase shifting photolithographic masks
#633Design and layout of phase shifting photolithographic masks
#634Planar circuit optimization
#635Use of multiple reticles in lithographic printing tools
#636Method for providing apertures having sublithographic dimensions in silicon substrates
#637Multiple mask step and scan aligner
#638Device manufacturing method, mask set for use in the method, data set for controlling a programmable patterning device, method of generating a mask pattern and a computer program
#639Lithographic process
#640Pattern writing apparatus and pattern writing method
#641System and method for data path handling, shot count minimization, and proximity effects correction related to mask writing process
#642Method and system for exposing photoresist in a microelectric device