197797 ⎘
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor; Structure or manufacture of heads, e.g. inductive; Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures; Details related to the use of magnetic thin film layers or to their effects Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
MAGNETIC HEAD AND MAGNETIC RECORDING DEVICE
#2MAGNETORESISTANCE EFFECT ELEMENT AND HEUSLER ALLOY
#3Multilayer Structures For Magnetic Recording Devices To Facilitate Targeted Magnetic Switching and Low Coercivity
#4Read sensor with ordered heusler alloy free layer and semiconductor barrier layer
#5Magnetoresistance effect element and Heusler alloy
#6Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity
#7Magnetoresistance effect element and Heusler alloy
#8Data storage devices with integrated slider voltage potential control
#9Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head
#10Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#11Magnetic sensor bias point adjustment method
#12Magnetoresistance effect element and Heusler alloy
#13Data storage devices with integrated slider voltage potential control
#14Heat sink structure for microwave-assisted magnetic recording (MAMR) head
#15Read head including semiconductor spacer and long spin diffusion length nonmagnetic conductive material and method of making thereof
#16Magnetic write head for providing spin-torque-assisted write field enhancement
#17Magnetic write head for providing spin-torque-assisted write field enhancement
#18Magnetic head for perpendicular magnetic recording including two side shields configured to enable a reduction in width of an end face of the main pole located in a medium facing surface and an increase in cross-sectional area of the main pole in the vicinity of the medium facing surface
#19Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
#20Tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head
#21Tunnel magnetoresistive sensor having leads supporting three dimensional current flow
#22Magnetoresistance element with improved response to magnetic fields
#23Double pinned magnetoresistance element with temporary ferromagnetic layer to improve annealing
#24Thermal assisted magnetic recording head with plasmon generator
#25Thin film magnetic head, head gimbals assembly, head arm assembly, and magnetic disk unit with improved air bearing surface
#26Tunnel magnetoresistance magnetic sensor with scissor sensor and multi-seed layer configuration
#27Manufacturing method for reader side shield
#28Magnetic sensor, magnetic head, and biomagnetic sensor
#29Reader designs of shield to shield spacing improvement
#30Confinement magnetic cap
#31Spin transport sensor
#32Zig-zag MIMO head reducing space between three sensors
#33Magnetic head, magnetic recording and reproducing apparatus, and method of manufacturing magnetic head
#34TMR device with novel free layer structure
#35TMR device with novel free layer structure
#36Magnetic sensor having optimal free layer back edge shape and extended pinned layer
#37Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields
#38Magnetoresistance element with improved response to magnetic fields
#39Method of manufacturing a CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#40Magnetic stack coupling buffer layer
#41Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability
#42Data reader with magnetic seed lamination
#43Magnetic recording apparatus
#44Depolarizing layer in a magnetic stack
#45Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#46High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#47Magnetoresistive element with three terminals, magnetic head, and magnetic recording and reproducing apparatus
#48Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a crystalline CoFeX layer and a Heusler alloy layer
#49Magnetoresistive sensor with AFM-stabilized bottom shield
#50Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers
#51Magnetoresistive sensor with variable shield permeability
#52Reader with decoupled magnetic seed layer
#53Antiferromagnetic (AFM) grain growth controlled random telegraph noise (RTN) suppressed magnetic head
#54TMR device with novel free layer
#55MR enhancing layer (MREL) for spintronic devices
#56MR enhancing layer (MREL) for spintronic devices
#57High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications
#58Magnetoresistance Device and Memory Device Including the Magnetoresistance Device
#59Reproducing head with spin-torque oscillator, and magnetic recording and reproducing apparatus
#60Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper
#61Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element
#62Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer
#63Magneto-resistive effect device, magnetic head assembly, and magnetic recording device
#64Method of manufacturing a magnetic read sensor having a low resistance cap structure
#65Current-perpendicular-to-plane (CPP) read sensor with dual seed and cap layers
#66Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer
#67TMR reader without DLC capping structure
#68Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
#69Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer and seed layers
#70Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer, shielding and seed layers
#71CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#72MR enhancing layer (MREL) for spintronic devices
#73CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS
#74Magnetoresistance sensors pinned by an etch induced magnetic anisotropy
#75DUAL CPP GMR HEAD USING A SCISSOR SENSOR
#76TMR sensor with a multilayered reference layer
#77Magnetoresistive effect element in CPP-type structure and magnetic disk device
#78Magnetoresistive effect element and magnetic disk device
#79MAGNETORESISTIVE SENSOR WITH OVERLAID COMBINED LEADS AND SHIELDS
#80Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
#81High SNR CPP reader using high frequency standing wave interference detection
#82Method for manufacturing CPP-type magnetoresistance effect element
#83Current perpendicular to plane (CPP) magnetic read head
#84Magnetic sensor including an element for generating signals related to resistance changes
#85Low noise magneto-resistive sensor utilizing magnetic noise cancellation
#86TMR device with novel free layer
#87TMR device with novel free layer structure
#88Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
#89Method for confining sense current of a read transducer to an air-bearing surface(ABS) side of a free layer
#90Methods and systems for using resistivity of sensor film in an element shunt
#91Magnetoresistive sensor design for signal noise pickup reduction for use with deep gap electrostatic discharge shunt
#92Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
#93Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
#94Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures
#95Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element
#96CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS
#97CURRENT-PERPENDICULAR-TO-PLANE READ SENSOR WITH AMORPHOUS FERROMAGNETIC AND POLYCRYSTALLINE NONMAGNETIC SEED LAYERS
#98FERROMAGNETIC TUNNEL JUNCTION DEVICE, MAGNETIC HEAD, AND MAGNETIC STORAGE DEVICE
#99Tunnel junction magnetoresistive sensor having a near zero magnetostriction free layer
#100Magnetic head and magnetic recording system
#101MAGNETORESISTIVE ELEMENT, MAGNETIC SENSOR, AND METHOD OF PRODUCING THE MAGNETORESISTIVE ELEMENT
#102Magnetic thin film, and magnetoresistance effect device and magnetic device using the same
#103CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer
#104Current perpendicular to plane magnetoresistive sensor with reduced read gap
#105Method and apparatus for manufacturing magnetoresistive element
#106Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
#107Magnetoresistive element having spacer layer that includes two layered regions composed of oxide semiconductor and nonmagnetic conductor phase sandwiched therebetween
#108Differential magnetoresistive magnetic head
#109Magnetic head having CPP sensor with improved stabilization of the magnetization of the pinned magnetic layer
#110Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
#111MAGNETORESISTIVE ELEMENT, MAGNETORESISTIVE HEAD, AND MAGNETIC DISK APPARATUS
#112Magneto-resistive effect device and magnetic disk system with refilled insulation layer in contact with a read end face of a cap layer
#113Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing
#114Process for composite free layer in CPP GMR or TMR device
#115Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element
#116Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers
#117Methods of fabricating magnetoresistance sensors pinned by an etch induced magnetic anisotropy
#118Thin-film magnetic head having an antistatic layer preventing a protective coat from being electrostatically charged
#119Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory
#120Magnetic thin film and magnetoresistance effect element
#121Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same
#122Magnetoresistive sensor with overlaid combined leads and shields
#123Magnetoresistive element, magnetic head, and magnetic recording apparatus
#124DUAL CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH HEUSLER ALLOY FREE LAYER AND MINIMAL CURRENT-INDUCED NOISE
#125Current-confined-path type magnetoresistive element and method of manufacturing same
#126Tunnel magnetoresistance element, magnetic head, and magnetic memory
#127Dual-layer free layer in a tunneling magnetoresistance (TMR) element
#128Magnetic head and method of producing the same
#129Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device
#130Magnetoresistive effect element with resistance adjustment layer of semimetal, magnetic head and magnetic reproducing apparatus
#131Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer
#132Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
#133Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method thereof
#134Magnetic head having oxidized read sensor edges to reduce sensor current shunting
#135Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
#136Magnetic recording element including a thin film layer with changeable magnetization direction
#137Thin film magnetic head having an angled insulating film
#138Method of manufacturing a magnetoresistive element
#139Methods of manipulating the relaxation rate in magnetic materials and devices for using the same
#140Magnetoresistive element including heusler alloy layer
#141Magnetoresistance effect element, magnetic head and magnetic reproducing system
#142Magnetoresistive effect device and method of manufacturing ferromagnetic structure
#143Read sensor stabilized by bidirectional anisotropy
#144Spin valve with Ir-Mn-Cr pinning layer and seed layer including Pt-Mn
#145Method for manufacturing magnetoresistance effect element
#146Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with high-resistivity amorphous ferromagnetic layers
#147Magnetoresistance device including diffusion barrier layer
#148Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
#149MTJ device with partially milled anti-parallel coupled bottom free layer
#150MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER
#151Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same
#152Magnetic head with improved CPP sensor using Heusler alloys
#153CPP-GMR magnetic head having GMR-screen layer
#154Magneto-resistance element and thin film magnetic head with improved heat reliability
#155Method of fabricating a thin film magnetic sensor on a wafer
#156Thin-film magnetic head having element portion
#157Magnetic apparatus with perpendicular recording medium and head having multilayered reproducing element using tunneling effect
#158Magnetoresistive device, thin film magnetic head, head gimbal assembly, head arm assembly, magnetic disk apparatus, synthetic antiferromagnetic magnetization pinned layer, magnetic memory cell, and current sensor
#159Method to increase CCP-CPP GMR output by thermoelectric cooling
#160Method and process for fabricating read sensors for read-write heads in mass storage devices
#161Exchange-coupled free layer with out-of-plane magnetization
#162MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL
#163Magnetoresistive element including connection layers with magnetization alignment angles therebetween of 30 to 60° between metallic magnetic layers
#164Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same
#165Magnetic field sensor provided with an upper shield layer having portions with different magnetostriction
#166Magnetic recording heads with bearing surface protections and methods of manufacture
#167Magnetoresistance element with improved magentoresistance change amount and with free layer having improved soft magnetic characteristics
#168Magnetoresistive structures and fabrication methods
#169Suppression of spin momentum transfer and related torques in magnetoresistive elements
#170Magnetic sensor using a magnetic oscillation element
#171Magnetic disk apparatus
#172Magnetoresistive device, magnetic reproducing head, and magnetic information reproducing apparatus
#173Magnetoresistive element and method of manufacturing the same
#174Magnetoresistive effect element having inner and outer pinned layers including a cobalt iron alloy
#175Magnetic sensor using NiFe alloy for pinned layer
#176GMR sensors with strongly pinning and pinned layers
#177Structure/method to form bottom spin valves for ultra-high density
#178Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing
#179Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
#180Structure/method to form bottom spin valves for ultra-high density
#181Method for manufacturing magnetic head device
#182Magnetoresistance device and method of fabrication using titanium nitride as capping layer
#183Magnetoresistance effect element having a pillar electrode
#184Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus
#185Structure and process for composite free layer in CPP GMR device
#186Granular type free layer and magnetic head
#187Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same
#188Magnetic head having layered film with tilted crystalline grain structure
#189Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory
#190Reproducing head and magnetic disk drive
#191Magnetoresistive effect having multiple base layers between an electrode and an antiferromagnetic layer, magnetic head, and magnetic recording device
#192Current perpendicular to plane (CPP) GMR structure having vanadium doped, AP coupled, multi-layered pinned structure
#193Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same
#194Magnetoresistive effect element, and magnetic head and magnetic reproducing apparatus including the same
#195Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus
#196Magnetic sensor having a seedlayer for providing improved hard magnet properties
#197Magnetoresistive head and read/write separation-type magnetic head
#198Method and apparatus having improved magnetic read head sensors
#199Magnetic head spin valve structure with CoFeCu magnetic layer and ZnO/TaOcap layer
#200CoFe insertion for exchange bias and sensor improvement
#201CCP magnetic detecting element including a self-pinned CoFe layer
#202CPP spin valve with ultra-thin CoFe(50%) laminations
#203Method and apparatus for manufacturing magnetoresistive element
#204Magnetoresistance effect film and magnetoresistance effect head
#205Free layer for CPP GMR having iron rich NiFe
#206Magneto-resistive element, magnetic head and magnetic storage apparatus
#207Magneto-resistive element, magnetic head and magnetic storage apparatus
#208CPP GMR using Fe based synthetic free layer
#209Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers
#210Magnetoresistive device, thin film magnetic head, head gimbal assembly and magnetic disk unit exhibiting superior magnetoresistive effect
#211Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
#212Magnetic head and magnetic reproducing system
#213Method of manufacturing thin film magnetic head
#214Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
#215Magnetoresistive head with first and second pairs of antiferromagnetic films imparting magnetic bias to first and second magnetization free layers and perpendicular magnetic recording-reproducing apparatus
#216Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure
#217Magnetoresistive head with an intermediate layer between first and second magnetization free layers and perpendicular magnetic recording-reproducing apparatus
#218Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus
#219Magnetoresistance effect element, magnetic head and magnetic reproducing system having pillar electrodes
#220Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
#221Read transducer structure having an embedded wear layer between thin and thick shield portions
#222Anisotropy field induced self pinned recessed antiferromagnetic reader
#223Lateral spin valve reader with vertically-integrated two-dimensional semiconducting channel
#224Magnetic write head for providing spin-torque-assisted write field enhancement
#225Thermally-assisted magnetic recording head and manufacturing method therefor
#226Lateral spin valve reader with vertically-integrated two-dimensional semiconducting channel
#227Plasmon generator including a heat sink layer interposed between two portions formed of different metal materials
#228Read sensor having an insulating layer capable of use in two-dimensional magnetic recording
#229Recessed AFM stitch interface engineering
#230Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities
#231Reader side shield
#232MgO based perpendicular spin polarizer in microwave assisted magnetic recording (MAMR) applications
#233Magnetic sensor with thin capping layer
#234Magnetic etch-stop layer for magnetoresistive read heads
#235Managed print service automated and integrated system