199435 ⎘
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using single-aperture storage elements, e.g. ring core; using multi-aperture plates in which each individual aperture forms a storage element using elements with single aperture or magnetic loop for storage, one element per bit, and for destructive read-out bit organised, such as 2 1/2D, 3D organisation, i.e. for selection of an element by means of at least two coincident partial currents both for reading and for writing
METHODS AND SYSTEMS FOR WRITING STATE INTO SUPERCONDUCTING CIRCUITS WITH INTEGRATED SEMICONDUCTOR-BASED CIRCUITS
#2Vertical selector for three-dimensional memory with planar memory cells
#3Semiconductor memory device and method of operating the same
#4Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods