ClassID:

199461

G11C11/22 - page 4 - CPC Classification

Classification description:

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Recent Application in this class:
#901
20050068837
2005-03-31

Asynchronous pseudo SRAM and access method therefor

#902
20050068809
2005-03-31

Memory

#903
20050063225
2005-03-24

Semiconductor memory device and various systems mounting them

#904
20050063214
2005-03-24

Semiconductor integrated circuit device

#905
20050063213
2005-03-24

Signal margin test mode for FeRAM with ferroelectric reference capacitor

#906
20050063212
2005-03-24

Reference circuit implemented to reduce the degradation of reference capacitors providing reference voltages for 1T1C FeRAM devices

#907
20050058010
2005-03-17

Addressing of memory matrix

#908
20050057958
2005-03-17

Memory

#909
20050057957
2005-03-17

Ferroelectric memory

#910
20050057956
2005-03-17

Semiconductor integrated circuit device and operation method therefor

#911
20050057955
2005-03-17

Semiconductor integrated circuit device and information storage method therefor

#912
20050054166
2005-03-10

Conductive metal oxide gate ferroelectric memory transistor

#913
20050052914
2005-03-10

Semiconductor memory device

#914
20050052896
2005-03-10

Nonvolatile ferroelectric memory device having multi-bit control function

#915
20050052895
2005-03-10

FeRAM using programmable register

#916
20050051820
2005-03-10

Fabrication process for a magnetic tunnel junction device

#917
20050047191
2005-03-03

Memory cell and semiconductor memory device

#918
20050047190
2005-03-03

FeRAM having test circuit and method for testing the same

#919
20050047189
2005-03-03

Reliable ferro fuse cell

#920
20050047188
2005-03-03

Ferroelectric memory device

#921
20050045930
2005-03-03

Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric

#922
20050041452
2005-02-24

Circuit and method for reducing fatigue in ferroelectric memories

#923
20050036377
2005-02-17

Semiconductor integrated circuit device

#924
20050036358
2005-02-17

Nonvolatile ferroelectric memory device with split word lines

#925
20050035384
2005-02-17

Ferroelectric memory devices having expanded plate lines

#926
20050033901
2005-02-10

Method and circuit for reading data from a ferroelectric memory cell

#927
20050033541
2005-02-10

Memory cell signal window testing apparatus

#928
20050024929
2005-02-03

Junction-isolated depletion mode ferroelectric memory devices

#929
20050024920
2005-02-03

Junction-isolated depletion mode ferroelectric memory devices

#930
20050024919
2005-02-03

Junction-isolated depletion mode ferroelectric memory devices

#931
20050024918
2005-02-03

Junction-isolated depletion mode ferroelectric memory devices

#932
20050024916
2005-02-03

Cell array block of FeRAM, and FeRAM using cell array

#933
20050024915
2005-02-03

Ferroelectric random access memory

#934
20050024914
2005-02-03

Nonvolatile ferroelectric memory device having a multi-bit control function

#935
20050024913
2005-02-03

Nonvolatile ferroelectric memory device having a multi-bit control function

#936
20050023615
2005-02-03

Semiconductor element and semiconductor memory device using the same

#937
20050018468
2005-01-27

Ferroelectric memory

#938
20050013161
2005-01-20

Ferroelectric memory and method of manufacturing the same

#939
20050013157
2005-01-20

Methods of reading junction-isolated depletion mode ferroelectric memory devices

#940
20050013156
2005-01-20

Semiconductor integrated circuit device having ferroelectric capacitor

#941
20050002216
2005-01-06

Ferroelectric memory device

#942
20050001250
2005-01-06

Semiconductor device and method for manufacturing the same

#943
18786636
2025-07-01

Memory structures and methods of forming the same

#944
18450985
2025-04-01

Multi-die mapping matrix multiplication

#945
17805664
2025-01-07

Read disturb mitigation for non-linear polar material based multi-capacitor bit-cell

#946
17229750
2023-12-12

Ferroelectric memory chiplet as unified memory in a multi-dimensional packaging

#947
16823209
2023-12-05

Low latency and high bandwidth artificial intelligence processor

#948
15673224
2018-09-25

Apparatuses and methods for reading memory cells

#949
15663641
2018-10-23

Memory devices with selective page-based refresh

#950
15604162
2018-07-31

Three-level ferroelectric memory cell using band alignment engineering

#951
15393585
2018-02-20

Non-volatile FeSRAM cell capable of non-destructive read operations

#952
15252146
2017-07-04

Analog ferroelectric memory with improved temperature range

#953
15246081
2017-06-20

Semiconductor memory device including a ferroelectric layer

#954
15197416
2017-04-04

Writing to cross-point non-volatile memory

#955
14842124
2016-10-04

Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

#956
14185264
2015-09-29

Semiconductor memory device performing a refresh operation, and memory system including the same