199461 ⎘
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Sub-classes:BACK END LINE OF MEMORY DEVICE
#2MANUFACTURING METHOD OF CONDUCTIVE PROBE
#3APPARATUS AND MECHANISM FOR PROCESSING NEURAL NETWORK TASKS USING A SINGLE CHIP PACKAGE WITH MULTIPLE IDENTICAL DIES
#4HIGH BANDWIDTH THREE-DIMENSIONAL SYSTEM-ON-CHIP
#5APPARATUS AND MECHANISM FOR PROCESSING NEURAL NETWORK TASKS USING A SINGLE CHIP PACKAGE WITH MULTIPLE IDENTICAL DIES
#6BACK END LINE OF MEMORY DEVICE
#7OPERATION METHOD FOR THREE-DIMENSIONAL FLASH MEMORY INCLUDING FERROELECTRIC-BASED DATA STORAGE PATTERN AND BACK GATE
#8Ferroelectric storage apparatus and manufacturing method of conductive probe
#9MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
#10DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION
#11Structure including a cross-bar router and method
#12SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
#13Ferroelectric recording medium and ferroelectric storage apparatus
#14SEMICONDUCTOR MEMORY DEVICE
#15SEMICONDUCTOR DEVICE
#16NON-VOLATILE STORAGE DEVICE, NON-VOLATILE STORAGE ELEMENT, AND MANUFACTURING METHOD FOR THEIR PRODUCTION
#17Sense amplifier schemes for accessing memory cells
#18Smart compute resistive memory
#19Ferroeolectric memories with ferroelectric composite layer
#20Voltage control of SOT-MRAM for deterministic writing
#21Stack register having different ferroelectric memory element constructions
#22Memory with one-time programmable (OTP) cells and reading operations thereof
#23Resistive memory device for matrix-vector multiplications
#24Electronic device and method for fabricating the same
#25Methods of fabricating capacitor and semiconductor device including the capacitor
#26Ferroelectric recording medium and ferroelectric storage apparatus
#27Time-based access of a memory cell
#28Memory devices with selective page-based refresh
#29Non-volatile memory system or sub-system
#30Smart compute resistive memory
#31Continuous thin film of a metal chalcogenide
#32MAGNETIC TUNNEL JUNCTIONS WITH TUNABLE HIGH PERPENDICULAR MAGNETIC ANISOTROPY
#33Apparatus and mechanism for processing neural network tasks using a single chip package with multiple identical dies
#34Ferroelectric memories
#35Ferroelectric memories
#36Non-volatile memory system or sub-system
#37Charge sharing between memory cell plates
#38Half density ferroelectric memory and operation
#39Multiple plate line architecture for multideck memory array
#40Data caching for ferroelectric memory
#41Time-based access of a memory cell
#42Fixed voltage sensing in a memory device
#43Memory devices with selective page-based refresh
#44SENSING A MEMORY CELL
#45Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
#46Ferroelectric random access memory sensing scheme
#47Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gate
#48Rounded shaped transistors for memory devices
#49Array of cross point memory cells and methods of forming an array of cross point memory cells
#50Chalcogenide memory device components and composition
#51Semiconductor storage device and read method thereof
#52Pulsed integrator and memory techniques for determining a state of a memory cell
#53Time-based access of a memory cell
#54Charge sharing between memory cell plates
#55Sense amplifier schemes for accessing memory cells
#56Non-volatile memory
#57Half density ferroelectric memory and operation
#58Sensing a memory cell
#59Memory devices with selective page-based refresh
#60Ferroelectric opening switch
#61Memory cells and arrays of elevationally-extending strings of memory cells
#62Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
#63Ferroelectric random access memory sensing scheme
#64Semiconductor chip manufacturing process for integrating logic circuitry, embedded DRAM and embedded non-volatile ferroelectric random access memory (FERAM) on a same semiconductor die
#65One transistor and ferroelectric FET based memory cell
#66Semiconductor storage element, semiconductor storage device, and semiconductor system
#67Multiple plate line architecture for multideck memory array
#68VERTICAL 1T FERROELECTRIC MEMORY CELLS, MEMORY ARRAYS AND METHODS OF FORMING THE SAME
#69Capacitive matrix arrangement and method for actuation thereof
#70Surface layer for electronic device
#71Array of cross point memory cells and methods of forming an array of cross point memory cells
#72Ferroelectric memory device
#73Symmetrically tunable electrical resistor
#74Electronic device
#75Pulsed integrator and memory techniques
#76Semiconductor storage element and electronic device
#77Writing to cross-point non-volatile memory
#78Resistive memory device including ferroelectrics and method of manufacturing the same
#79Charge sharing between memory cell plates using a conductive path
#80Devices and apparatuses including asymmetric ferroelectric materials, and related methods
#81Chalcogenide memory device components and composition
#82Apparatuses and methods for reading memory cells
#83Sense amplifier schemes for accessing memory cells
#84Memory devices with selective page-based refresh
#85PIEZOELECTRIC DEVICE
#86Memory cells and devices
#87Methods and apparatus to detect and correct errors in destructive read non-volatile memory
#88Data caching for ferroelectric memory
#89Non-volatile memory system or sub-system
#90Resistance change memory devices
#91Memory cell sensing with storage component isolation
#92Time-based access of a memory cell
#93Multiple plate line architecture for multideck memory array
#94Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
#95Multiple plate line architecture for multideck memory array
#96Ferroelectric memory device and cross-point array apparatus including the same
#97Unipolar magnetoelectric magnetic tunnel junction
#98Ferroelectric-modulated Schottky non-volatile memory
#99Writing to cross-point non-volatile memory
#100Memory cells and semiconductor devices including ferroelectric materials
#101Half density ferroelectric memory and operation
#102Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same
#103Recovery of data read from memory with unknown polarity
#104Electromagnetic conversion device and information memory comprising the same
#105Writing to cross-point non-volatile memory
#106Apparatuses having a ferroelectric field-effect transistor memory array and related method
#107Half density ferroelectric memory and operation
#108Charge sharing between memory cell plates using a conductive path
#109Array of cross point memory cells and methods of forming an array of cross point memory cells
#110Charge sharing between memory cell plates using a conductive path
#111Data caching for ferroelectric memory
#112Apparatus and methods for memory using in-plane polarization
#113Methods and apparatus for memory programming
#114Memory cell sensing with storage component isolation
#115Ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier
#116Magnetic random access memory using current sense amplifier for reading cell data and related method
#117Electroentropic memory device
#118Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
#119Doped ferroelectric hafnium oxide film devices
#120Apparatuses having a ferroelectric field-effect transistor memory array and related method
#121Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors
#122CMOS analog memories utilizing ferroelectric capacitors
#123Method for preventing an unauthorized use of biprocess components
#124Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
#125Ferroelectric mechanical memory and method
#126Devices comprising high-K dielectric layer and methods of forming same
#127Ferroelectric mechanical memory based on remanent displacement and method
#128Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
#129CMOS analog memories utilizing ferroelectric capacitors
#130Non-volatile static random access memory (NVSRAM) having a shared port
#131Electronic device having resistance element
#132Apparatuses having a ferroelectric field-effect transistor memory array and related method
#133Differential current sensing scheme for magnetic random access memory
#134Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
#135Ferroelectric random access memory with plate line drive circuit
#136C-element with non-volatile back-up
#137Methods, apparatus and system for TDDB testing
#138Methods of producing and controlling tunneling electroresistance and tunneling magnetoresistance in a multiferroic tunnel junction
#139FRAM cell with cross point access
#140Semiconductor device and dielectric film including a fluorite-type crystal
#141Varistor
#142Nonvolatile semiconductor storage device having improved reading and writing speed characteristics
#143Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
#144Method and circuit enabling ferroelectric memory to be fixed to a stable state
#145Electronic device and method for fabricating the same
#146Bipolar-MOS memory circuit
#147Memory cell
#148Differential current sensing scheme for magnetic random access memory
#149Piezoelectric element, liquid ejecting head, liquid ejecting apparatus, ultrasonic sensor, piezoelectric motor, and power generating apparatus
#150Data holding device and logic operation circuit using the same
#151Ferroelectric memory device
#152Storage device and information processing system
#153Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
#154Differential current sensing scheme for magnetic random access memory
#155Semiconductor device and method of designing the same
#156Apparatuses having a ferroelectric field-effect transistor memory array and related method
#157Electronic elements based on quasitwo-dimensional electron/hole gas at charged domain walls in ferroelectrics
#158Ferroelectric capacitor with improved fatigue and breakdown properties
#159Hybrid non-volatile memory device
#160Power reduction circuit and method
#161Ferroelectric memory device and method for manufacturing same
#162Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
#163Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
#164Memory device and semiconductor device
#165Piezoelectronic memory
#166Method of implementing a ferroelectric tunnel junction, device comprising a ferroelectric tunnel junction and use of such a device
#167Pulse generator and ferroelectric memory circuit
#168Memory cells having ferroelectric materials
#169Poly α-amino acid and ferroelectric memory element using same
#170Magnetic recording device and magnetic recording apparatus
#171Method for preventing an unauthorized use of disposable bioprocess components
#172Semiconductor memory device capable of measuring write current and method for measuring write current
#173Memory devices, circuits and, methods that apply different electrical conditions in access operations
#174Nonvolatile memory apparatus and method for driving the same
#175Electronic device and method for FRAM power supply management
#176Method of driving nonvolatile semiconductor device
#177Storage device and information processing system
#178Phase change material cell with piezoelectric or ferroelectric stress inducer liner
#179Method and system for utilizing Perovskite material for charge storage and as a dielectric
#180Synchronous nonvolatile memory device and memory system supporting consecutive division addressing DRAM protocol
#181Ferroelectric thin film having superlattice structure, manufacturing method thereof, ferroelectric element, and manufacturing method thereof
#182SEMICONDUCTOR DEVICE
#183Resistor structure for a non-volatile memory device and method
#184Method to maintain power supply voltage during brownout
#185Non-volatile semiconductor memory device
#186Spin torque transfer memory cell structures and methods
#1873D architecture for bipolar memory using bipolar access device
#188Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layer
#189Workpiece-holding unit for installation on machining centers for connecting rods
#190Differential plate line screen test for ferroelectric latch circuits
#191SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
#192Semiconductor device
#193Organic ferroelectric material based random access memory
#194Ferroelectric memory device and fabrication process thereof, fabrication process of a semiconductor device
#195Stack processor using a ferroelectric random access memory (F-RAM) for code space and a portion of the stack memory space
#196Ferro-resistive random access memory (Ferro-RRAM), operation method and manufacturing method thereof
#197Embedded non-volatile memory circuit for implementing logic functions across periods of power disruption
#198SEMICONDUCTOR MEMORY SYSTEM SELECTIVELY STORING DATA IN NON-VOLATILE MEMORIES BASED ON DATA CHARACTERSTICS
#199Data holding device and logic operation circuit using the same
#200Non-volatile memory device using variable resistance element with an improved write performance
#201Identifying and correcting a bit error in a FRAM storage unit of a semiconductor device
#202METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STORAGE AND AS A DIELECTRIC
#203METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STORAGE AND AS A DIELECTRIC
#204Differential plate line screen test for ferroelectric latch circuits
#205Memory support provided with memory elements of ferroelectric material and non-destructive reading method thereof
#206MEMORY SUPPORT PROVIDED WITH ELEMENTS OF FERROELECTRIC MATERIAL AND PROGRAMMING METHOD THEREOF
#207Memory support provided with memory elements of ferroelectric material and improved non-destructive reading method thereof
#208Control circuit and data hold device using the control circuit
#209Variable resistance memory devices using read mirror currents
#210SEMICONDUCTOR MEMORY DEVICE WITH FERROELECTRIC DEVICE AND REFRESH METHOD THEREOF
#211Method and apparatus pertaining to a ferroelectric random access memory
#212High speed FRAM
#213Fast response circuits and methods for FRAM power loss protection
#214Phase change material cell with stress inducer liner
#215Ferroelectric random access memory with single plate line pulse during read
#216Semiconductor system, semiconductor memory apparatus, and method for input/output of data using the same
#217Optical memory device based on DHFLC material and method of preparing the same
#218Memory cell and memory device using the same
#219METHOD TO IMPROVE FERROELECTRIC MEMORY PERFORMANCE AND RELIABILITY
#220Polarization-coupled ferroelectric unipolar junction memory and energy storage device
#221Ferro-electric device and modulatable injection barrier
#222Resistor structure for a non-volatile memory device and method
#223Semiconductor memory device and semiconductor integrated circuit
#224Spin torque transfer memory cell structures and methods
#225Ferroelectric memory
#226Magnetic recording device and magnetic recording apparatus
#227Use of gamma hardened RFID tags in pharmaceutical devices
#228RESISTIVE MEMORY CELL AND OPERATION THEREOF, AND RESISTIVE MEMORY AND OPERATION AND FABRICATION THEREOF
#229Method for operating a nonvolatile switching device
#230Semiconductor memory and method for operating the semiconductor memory
#231Flexible ferroelectric memory device and manufacturing method for the same
#232Variable impedance circuit controlled by a ferroelectric capacitor
#233Semiconductor memory device and a method of operating thereof
#234Nonvolatile logic circuit and a method for operating the same as an exclusive-OR (XOR) circuit
#235Non-volatile logic circuit and a method for operating the same
#236Non-volatile logic circuit and a method for operating the same
#237MEMORY CELL AND MEMORY DEVICE USING THE SAME
#238Ferroelectric memories based on arrays of autonomous memory bits
#239Semiconductor memory cell and manufacturing method thereof, and semiconductor memory devices
#240DUAL-GATE NON-VOLATILE FERROELECTRIC MEMORY
#241Low-power redundancy for non-volatile memory
#242Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors
#243SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREFOR
#244High speed FRAM including a deselect circuit
#245Semiconductor memory device
#246Graphene Memory Cell and Fabrication Methods Thereof
#247NONVOLATILE FERROELECTRIC MEMORY DEVICE USING SILICON SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND REFRESH METHOD THEREOF
#248METHOD OF MANUFACTURING POLYMER MATERIAL
#249Memory devices and methods of operating the same
#250Single transistor memory with immunity to write disturb
#251Double-gated transistor memory
#252Data holding device
#253FERROELECTRIC ORGANIC MEMORIES WITH ULTRA-LOW VOLTAGE OPERATION
#254Organic memory array with ferroelectric field-effect transistor pixels
#255Green transistor for nano-Si ferro-electric RAM and method of operating the same
#256METHOD TO IMPROVE FERROELECTRIC MEMORY PERFORMANCE AND RELIABILITY
#257Ferroelectric memory devices and operating methods thereof
#258Ferroelectric polymer memory module
#259NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
#260Semiconductor memory device and driving method of the same
#261Ferro-electric random access memory apparatus
#262Non-volatile memory device and method for manufacturing the same
#263Ferroelectric random access memory and memory system
#264Nonvolatile memory cell and method of manufacturing the same
#265Semiconductor memory device
#266Semiconductor integrated circuit
#267Semiconductor storage device
#268Data path read/write sequencing for reduced power consumption
#269F-SRAM power-off operation
#270Nonvolatile storage gate, operation method for the same, and nonvolatile storage gate embedded logic circuit, and operation method for the same
#271Method for preventing an unauthorized use of disposable bioprocess components
#272Gamma sterilizable RFID system that prevents unauthorized operation of associated disposable bioprocess components
#273Ferroelectric memory device for adjusting the capacitor of a bit line
#274Semiconductor device including a transistor and a ferroelectric capacitor
#275F-RAM device with current mirror sense amp
#276Variable impedance circuit controlled by a ferroelectric capacitor
#277F-RAM device with current mirror sense amp
#278Memory devices having an embedded resistance memory with metal-oxygen compound
#279Differential plate line screen test for ferroelectric latch circuits
#280Polymer-based ferroelectric memory
#281Voltage excited piezoelectric resistance memory cell system
#282Reduced complexity array line drivers for 3D matrix arrays
#283Ferroelectric memory bake for screening and repairing bits
#284Nonvolatile ferroelectric memory device
#285MFMS-FET, Ferroelectric Memory Device, And Methods Of Manufacturing The Same
#286Semiconductor element
#287Method for mitigating imprint in a ferroelectric memory
#288Semiconductor memory and test method for the semiconductor memory
#289Memory array power domain partitioning
#290FERROELECTRIC MATERIAL AND METHOD OF FORMING FERROELECTRIC LAYER USING THE SAME
#291ETCHING METHOD AND ETCHING APPARATUS
#292Semiconductor device and method for manufacturing the same having improved polarization reversal characteristic
#293Multilayer ferroelectric data storage system with regenerative read
#294F-RAM device with current mirror sense amp
#295Nonvolatile ferroelectric memory and control device using the same
#296Reconfigurable electric circuitry and method of making same
#297Computer memory device with multiple interfaces
#298Reference voltage generation circuit and semiconductor memory
#299Ferro-electric device and modulatable injection barrier
#300Ferroelectric memory