199484 ⎘
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
METHOD FOP FORMING MEMORY DEVICE
#2Metal-insulator-semiconductor tunnel diode memory
#3HIGH DENSITY NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY
#4Circuit and method for configurable impedance array
#5Circuit and method for configurable impedance array
#6Circuit and method for configurable impedance array
#7A NEGATIVE DIFFERENTIAL RESISTANCE BASED MEMORY
#8Electro-mechanical diode non-volatile memory cell for cross-point memory arrays
#9Electronic device, method of manufacturing the same, and storage device
#10Multi-valued logic/memory cells and methods thereof
#11Static RAM memory cell with DNR chalcogenide devices and method of forming