199523 ⎘
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
#2MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
#3MULTI-STATE PROGRAMMING OF MEMORY CELLS
#4CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY
#5Memory device and programming method thereof
#6Circuit design and layout with high embedded memory density
#7Methods for accessing resistive change elements operable as antifuses
#8Circuit design and layout with high embedded memory density
#9Two-terminal non-volatile memory cell for decoupled read and write operations
#10Multi-state programming of memory cells
#11Memory devices and methods of forming memory devices
#12Semiconductor device
#13Difference merging for map portions
#14Switching atomic transistor and method for operating same
#15Semiconductor device
#16Storage device
#17PROGRAMMABLE INTEGRATED CIRCUIT AND CONTROL DEVICE
#18Switching resistor and method of making such a device
#19Methods for accessing resistive change elements in resistive change element arrays
#20Switching atomic transistor and method for operating same
#21Memory write and read assistance using negative differential resistance devices
#22Memory device for matrix-vector multiplications
#23Devices and methods for accessing resistive change elements in resistive change element arrays
#24Resistance change memory device
#25MEMORY DEVICE
#26Memory sense amplifiers and memory verification methods
#27Variable resistance element and memory device
#28Programming for electronic memories
#29Memory sense amplifiers and memory verification methods
#30Memory device for matrix-vector multiplications
#31Resistance-change memory operating with read pulses of opposite polarity
#32Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#33Method and apparatus for healing phase change memory devices
#34Memory cell verification circuits, memory cell sense circuits and memory cell verification methods
#35Memory system
#36Resistive random-access memory cells
#37Non-volatile SRAM with multiple storage states
#38Method for operating a conductive bridging memory device
#39Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
#40Silicon based nanoscale crossbar memory
#41Resistive memory device and method of operating the resistive memory device
#42Control of memory device reading based on cell resistance
#43Non-volatile SRAM with multiple storage states
#44Nonvolatile memory device, memory system including the same and method for driving nonvolatile memory device
#45NAND array comprising parallel transistor and two-terminal switching device
#46Nonvolatile memory device having variable resistance memory cells and a method of resetting by initially performing pre-read or strong set operation
#47Memory system
#48Permutational memory cells
#49Method of operating FET low current 3D re-ram
#50Silicon based nanoscale crossbar memory
#51Memory sense amplifiers and memory verification methods
#52Resistive random-access memory cells
#53Memory element and memory device
#54Resistive memory device with word lines coupled to multiple sink transistors
#55Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#56Hardware chip select training for memory using write leveling mechanism
#57Resistance change element and method for producing the same
#58Coding techniques for reducing write cycles for memory
#59Permutational memory cells
#60Memory cell having dielectric memory element
#61Solid electrolyte based memory devices and methods having adaptable read threshold levels
#62Non-volatile variable capacitive device including resistive memory cell
#63Resistive memory array and method for controlling operations of the same
#64Memory element and memory device
#65Memory apparatus
#66Nonvolatile variable resistive device
#67Nonvolatile semiconductor memory and control method thereof
#68SEMICONDUCTOR DEVICE
#69Silicon based nanoscale crossbar memory
#70Optimized solid electrolyte for programmable metallization cell devices and structures
#71Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#72Non-volatile variable capacitive device including resistive memory cell
#73NON-VOLATILE MEMORY WITH PROGRAMMABLE CAPACITANCE
#74Resistive memory and method for controlling operations of the same
#75Information recording device and method of manufacturing the same
#76Microelectronic programmable device and methods of forming and programming the same
#77Nonvolatile semiconductor memory device
#78Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#79Method for adjusting a resistive change element using a reference
#80Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof
#81Method for resetting a resistive change memory element
#82Continuously variable resistor
#83Organic memory devices and methods of fabricating such devices
#84Semiconductor device
#85One-transistor, one-resistor, one-capacitor phase change memory
#86Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#87Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
#88Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
#89Memory element and memory device
#90Semiconductor storage device and method of manufacturing the same
#91Memory cell having dielectric memory element
#92Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device
#93Programming a memory cell with a diode in series by applying reverse bias
#94Microelectronic programmable device and methods of forming and programming the same
#95Silicon based nanoscale crossbar memory
#96Semiconductor device
#97Variable integrated analog resistor
#98Non-volatile memory with programmable capacitance
#99Optimized solid electrolyte for programmable metallization cell devices and structures
#100Method of Operating an Integrated Circuit, and Integrated Circuit
#101Apparatus and method for determining a memory state of a resistive n-level memory cell and memory device
#102Integrated Circuit and Method of Improved Determining a Memory State of a Memory Cell
#103RESISTIVE MEMORY CELL AND METHOD FOR OPERATING SAME
#104Semiconductor memory device including a reference cell
#105Method of operating an integrated circuit, integrated circuit and method to determine an operating point
#106Integrated circuit having a memory cell arrangement and method for reading a memory cell state using a plurality of partial readings
#107SEMICONDUCTOR DEVICE
#108Semiconductor device with ion movement control
#109Conditioning operations for memory cells
#110Semiconductor device
#111Integrated circuit including logic portion and memory portion
#112Integrated Circuit, Method of Operating an Integrated Circuit, Memory Cell Array, and Memory Module
#113Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, and Computing System
#114Microelectric programmable device and methods of forming and programming the same
#115Integrated Circuit, Memory Module, Method of Operating an Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Computer Program Product
#116Method for classifying memory cells in an integrated circuit
#117Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device
#118Method of Manufacturing a Memory Device, Memory Device, Cell, Integrated Circuit, Memory Module, and Computing System
#119Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit
#120Integrated circuit, memory cell array, memory module, method of operating an integrated circuit, and computing system
#121Optimized solid electrolyte for programmable metallization cell devices and structures
#122Integrated circuit, memory chip and method of evaluating a memory state of a resistive memory cell
#123Resistive memory including refresh operation
#124Memory system and method of operating the memory system
#125Memory device and method for transforming between non-power-of-2 levels of multilevel memory cells and 2-level data bits
#126Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell
#127Non-volatile memory device
#128CBRAM cell and CBRAM array, and method of operating thereof
#129Method and memory circuit for operating a resistive memory cell
#130Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module
#131Optimized solid electrolyte for programmable metallization cell devices and structures
#132Read, write, and erase circuit for programmable memory devices
#133Memory device driving circuit
#134Circuit and a method of determining the resistive state of a resistive memory cell
#135Organic memory devices and methods of fabricating such devices
#136Integrated circuit memory having a read circuit
#137Programmable memory device circuit
#138Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements
#139STORAGE DEVICES AND SEMICONDUCTOR DEVICES
#140Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region
#141Multi-context memory cell
#142Read, write and erase circuit for programmable memory devices
#143Probe storage device, system including the device, and methods of forming and using same
#144Microelectronic programmable device and methods of forming and programming the same
#145Programmable structure, an array including the structure, and methods of forming the same
#146Programmable structure, an array including the structure, and methods of forming the same
#147Point contact array, not circuit, and electronic circuit using the same
#148Memory element having islands
#149Memory device
#150Memory device
#151Semiconductor device
#152Point contact array, not circuit, and electronic circuit comprising the same
#153Formation of structurally robust nanoscale Ag-based conductive structure
#154Memristor access transistor controlled non-volatile memory programming methods
#155Formation of structurally robust nanoscale Ag-based conductive structure
#156Enhanced MLC programming
#157Read operations and circuits for memory devices having programmable elements, including programmable resistance elements